Different angle-resolved polarization configurations of Raman spectroscopy: A case on the basal and edge plane of two-dimensional materials

Angle-resolved polarized Raman（ARPR） spectroscopy can be utilized to assign the Raman modes based on crystal symmetry and Raman selection rules and also to characterize the crystallographic orientation of anisotropic materials.However, polarized Raman measurements can be implemented by several different configurations and thus lead to different results. In this work, we systematically analyze three typical polarization configurations： 1） to change the polarization of the incident laser, 2） to rotate the sample, and 3） to set a half-wave plate in the common optical path of incident laser and scattered Raman signal to simultaneously vary their polarization directions. We provide a general approach of polarization analysis on the Raman intensity under the three polarization configurations and demonstrate that the latter two cases are equivalent to each other. Because the basal plane of highly ordered pyrolytic graphite（HOPG） exhibits isotropic feature and its edge plane is highly anisotropic, HOPG can be treated as a modelling system to study ARPR spectroscopy of twodimensional materials on their basal and edge planes. Therefore, we verify the ARPR behaviors of HOPG on its basal and edge planes at three different polarization configurations. The orientation direction of HOPG edge plane can be accurately determined by the angle-resolved polarization-dependent G mode intensity without rotating sample, which shows potential application for orientation determination of other anisotropic and vertically standing two-dimensional materials and other materials.

A CMOS Compatible Si Template with (111) Facets for Direct Epitaxial Growth of Ⅲ–Ⅴ Materials

Ⅲ-Ⅴ quantum dot(QD) lasers monolithically grown on CMOS-compatible Si substrates are considered as essential components for integrated silicon photonic circuits.However,epitaxial growth of Ⅲ-Ⅴ materials on Si substrates encounters three obstacles:mismatch defects,antiphase boundaries(APBs),and thermal cracks.We study the evolution of the structures on U-shaped trench-patterned Si(001) substrates with various trench orientations by homoepitaxy and the subsequent heteroepitaxial growth of GaAs film.The results show that the formation of(111)-faceted hollow structures on patterned Si(001) substrates with trenches oriented along [110] direction can effectively reduce the defect density and thermal stress in the GaAs/Si epilayers.The(111)-faceted silicon hollow structure can act as a promising platform for the direct growth of Ⅲ-Ⅴ materials for silicon based optoelectronic applications.

Efficient and multifunctional terahertz polarization control device based on metamaterials

Terahertz polarization devices are an important part of terahertz optical systems.Traditional terahertz polarization devices rely on birefringent crystals,and their performances are limited by the material structures.In this work,we theoretically demonstrate that the metamaterial consisting of the medium and the periodic metal band embedded in the medium can control broadband polarization effectively.The transmission length of the subwavelength waveguide mode gives rise to a broadband transmission peak.The resonant cavity structure formed by the dielectric layer and the waveguide layer possesses a high transmission efficiency.By optimizing the metamaterial structure parameters,we design a high-efficient(>90%)quarter-wave plate over a frequency range of 0.90 THz-1.10 THz and a high-efficient(>90%)half-wave plate over a frequency range of 0.92 THz-1.02 THz.Besides,due to the anisotropy of the structure,the metamaterials with the same structural parameters can achieve the function of the polarized beam splitting with an efficiency of up to 99%over a frequency range of 0.10 THz-0.55 THz.Therefore,the designed metamaterial has a multifunctional polarization control effect,which has potential applications in the terahertz integrated polarization optical system.

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.

A three-band perfect absorber based on a parallelogram metamaterial slab with monolayer MoS_(2)

As a two-dimensional(2D)material,monolayer MoS2which limits its optical applications has a low absorption efficiency.In this paper,we propose a three-band perfect metamaterial absorber in the visible light range based on monolayer MoS_(2).The peak absorptivity of the structure at each resonance wavelength is nearly perfect,moreover,the light absorption of monolayer MoS2is obviously enhanced at the three resonant wavelengths.The dielectric–dielectric–metal structure we designed produces the coupling of Fabry–Perot resonance and high-order diffraction guided-mode resonance at different absorption peaks,which has been proved by the slab waveguide theory.In addition,the multi-modal absorption phenomenon is explained by extracting the equivalent impedance.The results show that we can adjust the absorption peak wavelength by regulating the parameters of the structure.This structure not only provides an idea for enhancing the interaction between light and two-dimensional materials but also has potential applications for optical detection devices.

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.

Cationic ordering transition in oxygen-redox layered oxide cathodes

Understanding the structural origin of the competition between oxygen 2p and transition-metal 3d orbitals in oxygen-redox(OR)layered oxides is eminently desirable for exploring reversible and high-energy-density Li/Na-ion cathodes.Here,we reveal the correlation between cationic ordering transition and OR degradation in ribbon-ordered P3-Na_(0.6)Li_(0.2)Mn_(0.8)O_(2) via in situ structural analysis.Comparing two different voltage windows,the OR capacity can be improved approximately twofold when suppressing the in-plane cationic ordering transition.We find that the intralayer cationic migration is promoted by electrochemical reduction from Mn^(4+)to Jahn–Teller Mn^(3+)and the concomitant NaO_(6) stacking transformation from triangular prisms to octahedra,resulting in the loss of ribbon ordering and electrochemical decay.First-principles calculations reveal that Mn^(4+)/Mn^(3+)charge ordering and alignment of the degenerate eg orbital induce lattice-level collective Jahn–Teller distortion,which favors intralayer Mn-ion migration and thereby accelerates OR degradation.These findings unravel the relationship between in-plane cationic ordering and OR reversibility and highlight the importance of superstructure protection for the rational design of reversible OR-active layered oxide cathodes.

Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by SAM.The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle.By comparing with the Raman spectrum,it is verified that the micropipes consist of edge dislocations.The different patterns of the RA images are due to the different orientations of the Burgers vectors.Besides,the strain distribution of the micropipes is also deduced.One can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM.Therefore,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

Development of in situ characterization techniques in molecular beam epitaxy

Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits

We demonstrate the photon-number resolution(PNR)capability of a 1.25 GHz gated InGaAs single-photon avalanche photodiode(APD)that is equipped with a simple,low-distortion ultra-narrowband interference circuit for the rejection of its background capacitive response.Through discriminating the avalanche current amplitude,we are able to resolve up to four detected photons in a single detection gate with a detection efficiency as high as 45%.The PNR capability is limited by the avalanche current saturation,and can be increased to five photons at a lower detection efficiency of 34%.The PNR capability,combined with high efficiency and low noise,will find applications in quantum information processing technique based on photonic qubits.

Metal halide perovskite photodetectors: Material features and device engineering

In recent years, the rapid progress of metal halide perovskite solar cells has been witnessed by the rocketing power conversion efficiency. In addition, perovskites have opened up a great opportunity for high performance photodetectors(PDs), due to their attractive optical and electrical properties. This review summarizes the latest progress of perovskitebased PDs, aiming to give a comprehensive understanding of the material design and device engineering in perovskite PDs.To begin with, the performance parameters and device configurations of perovskite PDs are introduced, which are the basis for the next discussion. Next, various PDs based on perovskites in different morphologies are discussed from two aspects:the preparation method, and device performance. Then, several device engineering strategies to enhance the performance of perovskite-based PDs are highlighted, followed by the introduction of flexible and narrow-band perovskite PDs. Finally,key issues and major challenges of perovskite PDs that need to be addressed in the future are outlined.

A review of manufacturing technologies for silicon carbide superjunction devices

Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.

Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

InAs/GaAs quantum dot(QD)lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy(MBE)system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm^(2) at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

Growth of high material quality InAs/GaSb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy

By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.

Localized-domains staging structure and evolution in lithiated graphite

Intercalation provides to the host materials a means for controlled variation of many physical/chemical properties and dominates the reactions in metal‐ion batteries.Of particular interest is the graphite intercalation compounds with intriguing staging structures,which however are still unclear,especially in their nanostructure and dynamic transition mechanism.Herein,the nature of the staging structure and evolution of the lithium(Li)‐intercalated graphite was revealed by cryogenic‐transmission electron microscopy and other methods at the nanoscale.The intercalated Li‐ions distribute unevenly,generating local stress and dislocations in the graphitic structure.Each staging compound is found macroscopically ordered but microscopically inhomogeneous,exhibiting a localized‐domains structural model.Our findings uncover the correlation between the long‐range ordered structure and short‐range domains,refresh the insights on the staging structure and transition of Li‐intercalated/deintercalated graphite,and provide effective ways to enhance the reaction kinetic in rechargeable batteries by defect engineering.

A 640×640 ISFET array for detecting cell metabolism

Ion sensitive field effect transistor(ISFET)devices are highly accurate,convenient,fast and low-cost in the detection of ions and biological macromolecules,such as DNA molecules,antibodies,enzymatic substrates and cellular metabolites.For high-throughput cell metabolism detection,we successfully designed a very large-scale biomedical sensing application specific integrated circuit(ASIC)with a 640×640 ISFET array.The circuit design is highly integrated by compressing the size of a pixel to 7.4×7.4μm^(2)and arranging the layout of even and odd columns in an interdigital pattern to maximize the utilization of space.The chip can operate at a speed of 2.083M pixels/s and the dynamic process of the fluid flow on the surface of the array was monitored through ion imaging.The pH sensitivity is 33±4 mV/pH and the drift rate is 0.06 mV/min after 5 h,indicating the stability and robustness of the chip.Moreover,the chip was applied to monitor pH changes in CaSki cells metabolism,with pH shifting from 8.04 to 7.40 on average.This platform has the potential for continuous and parallel monitoring of cell metabolism in single-cell culture arrays.

Organic Optoelectronic Synapses for Sound Perception

The neuromorphic systems for sound perception is under highly demanding for the future bioinspired electronics and humanoid robots.However,the sound perception based on volume,tone and timbre remains unknown.Herein,organic optoelectronic synapses(OOSs)are constructed for unprecedented sound recognition.The volume,tone and timbre of sound can be regulated appropriately by the input signal of voltages,frequencies and light intensities of OOSs,according to the amplitude,frequency,and waveform of the sound.The quantitative relation between recognition factor(ζ)and postsynaptic current(I=I_(light)−I_(dark))is established to achieve sound perception.Interestingly,the bell sound for University of Chinese Academy of Sciences is recognized with an accuracy of 99.8%.The mechanism studies reveal that the impedance of the interfacial layers play a critical role in the synaptic performances.This contribution presents unprecedented artificial synapses for sound perception at hardware levels.

A first-principles study on remote van der Waals epitaxy through a graphene monolayer on semiconductor substrates

To investigate the mechanism of remote epitaxy, where the overlayer can follow the same crystalline structure as the underlying semiconductor substrate through a thin two-dimensional interlayer, we systematically study the potential fluctuations of graphene covered Si, Ga As, and Ga N substrates from first-principles. We find that the uneven semiconductor surface, the distorted graphene, and the non-uniform interface charge transfer make significant contributions to the potential fluctuation. The semiconductor substrate with different surface reconstructions and orientations will generate different potential fluctuations through the graphene interlayer. We also calculate and compare the adsorption of adatoms on graphene covered substrates. The adsorption energies of adatoms not only depend on their distances to the underlying semiconductor surface, but are also sensitive to the direction of the charge transfer at the graphene/substrate interface. Changing the semiconductor reconstruction or orientation could even reverse the order of the adsorption energies of cation and anion adatoms by reversing the interface charge transfer direction, leading to a change in the growth orientation of the overlayer.Our study improves the understanding of the mechanism of remote epitaxy, and reveals that it is possible to control the initial nucleation and orientation of overlayers by changing the semiconductor reconstructions and/or orientations in remote epitaxy.

On the origin of carrier localization in AlInAsSb digital alloy

We compared the photoluminescence(PL)properties of Al In As Sb digital alloy samples with different periods grown on Ga Sb(001)substrates by molecular beam epitaxy.Temperature-dependent S-shape behavior is observed and explained using a thermally activated redistribution model within a Gaussian distribution of localized states.There are two different mechanisms for the origin of the PL intensity quenching for the Al In As Sb digital alloy.The high-temperature activation energy E_(1)is positively correlated with the interface thickness,whereas the low-temperature activation energy E_(2)is negatively correlated with the interface thickness.A quantitative high-angle annular dark-field scanning transmission electron microscopy(HAADF-STEM)study shows that the interface quality improves as the interface thickness increases.Our results confirm that E_(1)comes from carrier trapping at a state in the In Sb interface layer,while E_(2)originates from the exciton binding energy due to the roughness of the Al As interface layer.

Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on(111)Si

GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared and it is found that the lattice parameter of the AlN buffer layer may have a significant effect on the stress state in the initial stage of subsequent GaN film growth.A larger compressive stress is beneficial to improved surface morphology and crystal quality of GaN film.The results of further orthogonal experiments show that an important factor affecting the lattice parameter is the growth rate of the AlN buffer layer.This work may be helpful for realizing simple GaN-on-Si structures and thus reducing the costs of growth processes.