Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires

In this work, we synthesized high-quality In As nanowires by a convenient chemical vapor deposition method,and developed a simple laser heating method to measure the thermal conductivity of a single In As nanowire in air. During the measurement, a focused laser was used to heat one end of a freely suspended nanowire, with its other end embedded into a carbon conductive adhesive. In order to obtain the thermal conductivity of In As nanowires, the heat loss in the heat transfer process was estimated, which includes the heat loss through air conduction, the heat convection, and the radiation loss. The absorption ratio of the laser power in the In As nanowire was calculated. The result shows that the thermal conductivity of In As nanowires monotonically increases from 6.4 W m-1K-1to 10.5 W m-1K-1with diameters increasing from 100 nm to 190 nm, which is ascribed to the enhanced phonon-boundary scattering.

Kuznetsov–Ma soliton and Akhmediev breather of higher-order nonlinear Schrdinger equation

In terms of Darboux transformation, we have exactly solved the higher-order nonlinear Schr6dinger equation that describes the propagation of ultrashort optical pulses in optical fibers. We discuss the modulation instability （MI） process in detail and find that the higher-order term has no effect on the MI condition. Under different conditions, we obtain Kuznetsov-Ma soliton and Akhmediev breather solutions of higher-order nonlinear Schredinger equation. The former describes the propagation of a bright pulse on a continuous wave background in the presence of higher-order effects and the soliton＇s peak position is shifted owing to the presence of a nonvanishing background, while the latter implies the modulation instability process that can be used in practice to produce a train of ultrashort optical soliton pulses.

Dynamics of magnetization in ferromagnet with spin-transfer torque

We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field.

Design for manufacturability of a VDSM standard cell library

This paper presents a method of designing a 65 nm DFM standard cell library.By reducing the amount of the library largely,the process of optical proximity correction（OPC） becomes more efficient and the need for large storage is reduced.This library is more manufacture-friendly as each cell has been optimized according to the DFM rule and optical simulation.The area penalty is minor compared with traditional library,and the timing,as well as power has a good performance.Furthermore,this library has passed the test from the Technology Design Department of Foundry.The result shows this DFM standard cell library has advantages that improve the yield.

Current-induced magnetic soliton solutions in a perpendicular ferromagnetic anisotropy nanowire

Magnon density distribution can be affected by the spin-transfer torque in a perpendicular ferromagnetic anisotropy nanowire. We obtain the analytical expression for the critical current condition. For the cases of below and above the critical value, the magnon density distribution admits bright and dark soliton states, respectively. Moreover, we discuss two-soliton collision properties that are modulated by the current. Each magnetic soliton exhibits no changes in both velocity and width before and after the collision.

A 3 Gb/s multichannel transceiver in 65 nm CMOS technology

This paper describes a 65 nm 16-bit parallel transceiver IP macro, whose rate is 3 Gb/s with a 5 p F load including the HBM 2000 V ESD protection. Equalizers and clock data recovery modules, CRC checkers and8 b/10 b encoders are not added in the design for reducing the latency, and the whole latency is 7 ns without cables.Since the transceiver has many robust features including a process, voltage and temperature independent phaselocked loop with calibrations, the low skew differential clock tree, and a stable current mode driver with common mode feedback, the transceiver can work properly at different process corners and extreme temperatures, and also can tolerate 20% power supply variations. The transceiver can be applied for the interface of sub-100 nm high performance processors, which require low latency and high stability. The transceiver shows a bitter error ratio of less than 10^-15 at 3 Gbps.