A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructur...A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAIAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.展开更多
基金supported by the National Instrument Program of China(Grant No.2012YQ140005)the National Key Basic Research Program of China(Grant Nos.2013CB932904 and 2016YFB0402403)the National Natural Science Foundation of China(Grant Nos.61274125 and 61435012)
文摘A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAIAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.
