We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using el...We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation （EBE）. The characteristics of the LaF3/PS system are analyzed by X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy dispersive X-ray spectroscopy （EDX）, and photoluminescence （PL）. XRD confirms the polycrystalline nature of the LaFz film. Nearly stoichiometric growth of LaF3 on PS is established by EDX. Such a thin LaF3 layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer, PL intensity of PS is found to decrease along with a small blue-shift.展开更多
文摘We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation （EBE）. The characteristics of the LaF3/PS system are analyzed by X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy dispersive X-ray spectroscopy （EDX）, and photoluminescence （PL）. XRD confirms the polycrystalline nature of the LaFz film. Nearly stoichiometric growth of LaF3 on PS is established by EDX. Such a thin LaF3 layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer, PL intensity of PS is found to decrease along with a small blue-shift.
