We present first-principle calculations on the magnetism in finite rectangular nanosilicenes（RNSs）. An antiferromagnetic（AFM） state at two zigzag edges is found when the RNSs approach a critical size. This AFM sta...We present first-principle calculations on the magnetism in finite rectangular nanosilicenes（RNSs）. An antiferromagnetic（AFM） state at two zigzag edges is found when the RNSs approach a critical size. This AFM state originates from the localized p_z orbits of Si atoms at the edges, similar to those in the infinitely long zigzag-edged silicon nanoribbons. The smallest RNS that can maintain the AFM phase as the ground state is identified. It is also found that aluminum dopants can regulate the distribution of the spin density and the energy difference between AFM and FM states.展开更多
Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The m...Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376102 and 11174048the Computational Support from Shanghai Supercomputer Center
文摘We present first-principle calculations on the magnetism in finite rectangular nanosilicenes（RNSs）. An antiferromagnetic（AFM） state at two zigzag edges is found when the RNSs approach a critical size. This AFM state originates from the localized p_z orbits of Si atoms at the edges, similar to those in the infinitely long zigzag-edged silicon nanoribbons. The smallest RNS that can maintain the AFM phase as the ground state is identified. It is also found that aluminum dopants can regulate the distribution of the spin density and the energy difference between AFM and FM states.
基金supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102)the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913)+5 种基金National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042)the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039)Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01)Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learningthe Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
文摘Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.
