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Field-effect at electrical contacts to two-dimensional materials
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作者 Yao Guo Yan Sun +13 位作者 Alvin Tang Ching-Hua Wang Yanqing Zhao Mengmeng Bai Shuting Xu Zheqi Xu Tao Tang Sheng Wang Chenguang Qiu Kang Xu Xubiao Peng Junfeng Han Eric Pop Yang Chai 《Nano Research》 SCIE EI CSCD 2021年第12期4894-4900,共7页
The inferior electrical contact to two-dimensional(2D)materials is a critical challenge for their application in post-silicon very large-scale integrated circuits.Electrical contacts were generally related to their re... The inferior electrical contact to two-dimensional(2D)materials is a critical challenge for their application in post-silicon very large-scale integrated circuits.Electrical contacts were generally related to their resistive effect,quantified as contact resistance.With a systematic investigation,this work demonstrates a capacitive metal-insulator-semiconductor(MIS)field-effect at the electrical contacts to 2D materials:The field-effect depletes or accumulates charge carriers,redistributes the voltage potential,and gives rise to abnormal current saturation and nonlinearity.On one hand,the current saturation hinders the devices’driving ability,which can be eliminated with carefully engineered contact configurations.On the other hand,by introducing the nonlinearity to monolithic analog artificial neural network circuits,the circuits’perception ability can be significantly enhanced,as evidenced using a coronavirus disease 2019(COVID-19)critical illness prediction model.This work provides a comprehension of the field-effect at the electrical contacts to 2D materials,which is fundamental to the design,simulation,and fabrication of electronics based on 2D materials. 展开更多
关键词 FIELD-EFFECT electrical contact two-dimensional materials NONLINEARITY in-memory-computing
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