The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques ...The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.展开更多
文摘The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.
