We prepare CuGaO2 thin films on SiO2 substrates by using the sol-gel spin-coating method with two combinations of Cu and a Ga source, Cu and Ga nitrate, or acetylacetonate. X-ray diffraction analysis reveals that the ...We prepare CuGaO2 thin films on SiO2 substrates by using the sol-gel spin-coating method with two combinations of Cu and a Ga source, Cu and Ga nitrate, or acetylacetonate. X-ray diffraction analysis reveals that the thin films prepared using nitrate sol that are annealed at a temperature of 850°C - 950°C show both c-axis-orientated peaks, (006) and a non-c-axis-oriented peak (012) with similar intensity;little dependence of signal intensity on annealing temperature is also shown. The films are opaque in appearance at these annealing temperatures. Scanning electron microscope observation reveals that the opaque appearance is due to the texture or cracks on the surface of the films. In contrast, the films prepared using acetylacetonate show a (006) peak with higher signal intensity than the (012) peaks. The films show more transparent appearance than that of the films by nitrate. The highest conductivity of the film is 5.7 × 10-4Ω-1·cm-1, obtained in the films by nitrate annealed at 850°C.展开更多
Delafossite structured p-type wide bandgap semiconductor, CuYO<sub>2</sub> thin films were prepared on SiO<sub>2</sub> substrate by sol-gel method using copper (II) acetate and yttrium (III) ac...Delafossite structured p-type wide bandgap semiconductor, CuYO<sub>2</sub> thin films were prepared on SiO<sub>2</sub> substrate by sol-gel method using copper (II) acetate and yttrium (III) acetate as source materials. The films preparation process was studied by varying annealing temperature after the preparation of gel films by spin coating, followed by thermal annealing at higher temperature. In the present work, one step annealing directly from Cu-Y-gel under nitrogen flow was used. X-ray diffraction (XRD) revealed that the film annealed at 800<sup>。</sup>C is significantly c-axis oriented, shows only (002) and (004) peaks at 15.6<sup>。</sup> and 31.5<sup>。</sup>, respectively. The optical bandgap of 3.7 - 3.8 eV is estimated by (αhν)2 plot which is higher than previous works. In addition, the films with highly c-axis orientation showed photoluminescence (PL) at room temperature with very broad peak at 2.3 eV. The films annealed at different temperature showed different structural properties.展开更多
文摘We prepare CuGaO2 thin films on SiO2 substrates by using the sol-gel spin-coating method with two combinations of Cu and a Ga source, Cu and Ga nitrate, or acetylacetonate. X-ray diffraction analysis reveals that the thin films prepared using nitrate sol that are annealed at a temperature of 850°C - 950°C show both c-axis-orientated peaks, (006) and a non-c-axis-oriented peak (012) with similar intensity;little dependence of signal intensity on annealing temperature is also shown. The films are opaque in appearance at these annealing temperatures. Scanning electron microscope observation reveals that the opaque appearance is due to the texture or cracks on the surface of the films. In contrast, the films prepared using acetylacetonate show a (006) peak with higher signal intensity than the (012) peaks. The films show more transparent appearance than that of the films by nitrate. The highest conductivity of the film is 5.7 × 10-4Ω-1·cm-1, obtained in the films by nitrate annealed at 850°C.
文摘Delafossite structured p-type wide bandgap semiconductor, CuYO<sub>2</sub> thin films were prepared on SiO<sub>2</sub> substrate by sol-gel method using copper (II) acetate and yttrium (III) acetate as source materials. The films preparation process was studied by varying annealing temperature after the preparation of gel films by spin coating, followed by thermal annealing at higher temperature. In the present work, one step annealing directly from Cu-Y-gel under nitrogen flow was used. X-ray diffraction (XRD) revealed that the film annealed at 800<sup>。</sup>C is significantly c-axis oriented, shows only (002) and (004) peaks at 15.6<sup>。</sup> and 31.5<sup>。</sup>, respectively. The optical bandgap of 3.7 - 3.8 eV is estimated by (αhν)2 plot which is higher than previous works. In addition, the films with highly c-axis orientation showed photoluminescence (PL) at room temperature with very broad peak at 2.3 eV. The films annealed at different temperature showed different structural properties.
