Ultrathin InSb films on SiO2/Si substrates are prepared by radio frequency（RF） magnetron sputtering and rapid thermal annealing（RTA） at 300,400,and 500℃,respectively.X-ray diffraction（XRD） indicates that InSb f...Ultrathin InSb films on SiO2/Si substrates are prepared by radio frequency（RF） magnetron sputtering and rapid thermal annealing（RTA） at 300,400,and 500℃,respectively.X-ray diffraction（XRD） indicates that InSb film treated by RTA at 500℃,which is higher than its melting temperature（about 485℃）,shows a monocrystalline-like feature.A high-resolution transmission electron microscopy（HRTEM） micrograph shows that melt recrystallization of InSb film on SiO2/Si（111） substrate is along the（111） planes.The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃,which is indicated by Fourier transform infrared spectroscopy（FTIR） measurement.The observed changes demonstrate that RTA is a viable technique for improving characteristics of InSb films,especially the melt-recrystallized film treated by RTA at 500℃.展开更多
Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers.In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlay...Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers.In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer,many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer.For multiple-quantum-well layers grown with the AlGaN interlayer,misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density.Besides misfit dislocations,the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface.展开更多
基金Project supported by the Special Funds for State 11th Five-Year Basic Research Project of China (Grant No. 51318060207)
文摘Ultrathin InSb films on SiO2/Si substrates are prepared by radio frequency（RF） magnetron sputtering and rapid thermal annealing（RTA） at 300,400,and 500℃,respectively.X-ray diffraction（XRD） indicates that InSb film treated by RTA at 500℃,which is higher than its melting temperature（about 485℃）,shows a monocrystalline-like feature.A high-resolution transmission electron microscopy（HRTEM） micrograph shows that melt recrystallization of InSb film on SiO2/Si（111） substrate is along the（111） planes.The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃,which is indicated by Fourier transform infrared spectroscopy（FTIR） measurement.The observed changes demonstrate that RTA is a viable technique for improving characteristics of InSb films,especially the melt-recrystallized film treated by RTA at 500℃.
基金Supported by the Natural Science Foundation of Heilongjiang Province under Grant No F2007-1the Open Experimentation Program of Beijing Institute of Technology(BJUT-GTS-200904).
文摘Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers.In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer,many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer.For multiple-quantum-well layers grown with the AlGaN interlayer,misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density.Besides misfit dislocations,the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface.
