THE DESIGN OF HIGH PERFORMANCE LINEAR TRANSCONDUCTOR

An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp(peak to peak), whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%.

Superconductivity in electron-doped arsenene

Based on the first-principles density functional theory electronic structure calculation,we investigate the possible phonon-mediated superconductivity in arsenene,a two-dimensional buckled arsenic atomic sheet,under electron doping.We find that the strong superconducting pairing interaction results mainly from the pz-like electrons of arsenic atoms and the A1 phonon mode around the K point,and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12%-applied biaxial tensile strain.This transition temperature is about ten times higher than that in the bulk arsenic under high pressure.It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors,including graphene,silicene,phosphorene,and borophene.

Strong ferroelectric and luminescence properties of 0-3 type 0.8BaTiO_(3)-0.2CaTiO_(3):Pr^(3+)composite ceramics prepared by cold sintering process

0-3 type ferroelectric-phosphor composite ceramics cannot be prepared by the traditional solid-state sintering(SSS)method due to the strong chemical reaction between ferroelectrics and phosphors during high-temperature sintering.The cold sintering process(CSP)may solve this issue by densifying ceramics at ultralow sintering temperatures.In this work,dense 0-3 type 0.8BaTiO3-0.2CaTiO3:Pr^(3+)(0.8BT-0.2CT:Pr^(3+))binary composite ceramics were fabricated at an ultralow temperature of 225℃via CSP with the Ba(OH)2·8H2O hydrated flux.The effects of the Ba(OH)2·8H2O content,sintering temperature,and sintering time on the microstructure and densification of the ceramics were investigated.The density of the composite ceramics prepared by the optimized sintering parameters reaches 89%.Both energy-dispersive X-ray(EDX)spectroscopy and X-ray diffraction(XRD)confirm the existence of BT and CT:Pr^(3+)phases in the prepared ceramics.A strong ferroelectric performance is obtained,and the luminescent properties of CT:Pr^(3+)are preserved for the ceramics.Furthermore,the 0.8BT-0.2CT:Pr^(3+)composite ceramics prepared by CSP have stronger photoluminescence and photo-stimulated luminescence than their counterparts prepared by cold sintering assistance(CSA)and SSS methods.Therefore,CSP is a promising method for combining luminescent and ferroelectric properties into 0-3 type composite ceramics.

Memristor-Based Signal Processing for Edge Computing

The rapid growth of the Internet of Things(IoTs)has resulted in an explosive increase in data,and thus has raised new challenges for data processing units.Edge computing,which settles signal processing and computing tasks at the edge of networks rather than uploading data to the cloud,can reduce the amount of data for transmission and is a promising solution to address the challenges.One of the potential candidates for edge computing is a memristor,an emerging nonvolatile memory device that has the capability of in-memory computing.In this article,from the perspective of edge computing,we review recent progress on memristor-based signal processing methods,especially on the aspects of signal preprocessing and feature extraction.Then,we describe memristor-based signal classification and regression,and end-to-end signal processing.In all these applications,memristors serve as critical accelerators to greatly improve the overall system performance,such as power efficiency and processing speed.Finally,we discuss existing challenges and future outlooks for memristor-based signal processing systems.