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Temperature dependence of LiNbO3 dislocation density in the near-surface layer
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作者 Oksana Semenova Aleksei Sosunov +1 位作者 Nikolai Prokhorov Roman Ponomarev 《Chinese Optics Letters》 SCIE EI CAS CSCD 2022年第6期40-46,共7页
Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has be... Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has been developed for LiNbO_(3) by using X-ray diffraction.The experimental results showed that the dislocation density of the near-surface layer reached the minimum at the thermal annealing temperature of 500℃,with the analysis being performed when wet selective etching and X-ray diffraction methods were used.We concluded that homogenization annealing is an effective technique to improve the quality of photonic circuits based on LiNbO_(3).The results obtained are important for optical waveguides,LiNbO_(3)-on-insulator-based micro-photonic devices,electro-optical modulators,sensors,etc. 展开更多
关键词 lithium niobate etching pits near-surface layer density of dislocations annealing X-ray diffraction
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