Long-wave infrared emission properties of strain-balanced InAs/In_(x)Ga_(1-x)As_(y)Sb_(1-y)type-Ⅱsuperlattice on different substrates

High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

InAs/InAsSb type-Ⅱ superlattice with near room-temperature long-wave emission through interface engineering

Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.