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Inverse Design of Phononic Crystal with Desired Transmission via a Gradient-Descent Approach
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作者 魏宇航 贺达海 《Chinese Physics Letters》 SCIE EI CAS CSCD 2023年第9期14-18,共5页
We propose a general approach based on the gradient descent method to study the inverse problem,making it possible to reversely engineer the microscopic configurations of materials that exhibit desired macroscopic pro... We propose a general approach based on the gradient descent method to study the inverse problem,making it possible to reversely engineer the microscopic configurations of materials that exhibit desired macroscopic properties.Particularly,we demonstrate its application by identifying the microscopic configurations within any given frequency range to achieve transparent phonon transport through one-dimensional harmonic lattices.Furthermore,we obtain the phonon transmission in terms of normal modes and find that the key to achieving phonon transparency or phonon blocking state lies in the ratio of the mode amplitudes at ends. 展开更多
关键词 PROPERTIES PHONON DESIRED
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Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO_(2)/Ti/Pt device
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作者 焦金龙 甘秋宏 +6 位作者 程实 廖晔 柯少颖 黄巍 汪建元 李成 陈松岩 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期656-660,共5页
The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any... The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface. 展开更多
关键词 FILAMENT memory resistive switching
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