The vibrational levels and potential energy surface of a stable structure for S2O in the excited electronic states C^1A＇ were carried out with algebraic method. The vibrational spectra were obtained （with total quan...The vibrational levels and potential energy surface of a stable structure for S2O in the excited electronic states C^1A＇ were carried out with algebraic method. The vibrational spectra were obtained （with total quantum number v=20） by fitting 30 spectra data. The fitted rms（root mean square） error based on the Hamiltonian witb 9 parameters was 2.40 cm^-1. The dissociation energy and force constant were also determined by the analytical potential energy surface. The method is proved to be effective by comparing these results with the experimental data.展开更多
基金This work Was supported by the National Natural Science Foundation of China（NSFCNo.10474050）.
文摘The vibrational levels and potential energy surface of a stable structure for S2O in the excited electronic states C^1A＇ were carried out with algebraic method. The vibrational spectra were obtained （with total quantum number v=20） by fitting 30 spectra data. The fitted rms（root mean square） error based on the Hamiltonian witb 9 parameters was 2.40 cm^-1. The dissociation energy and force constant were also determined by the analytical potential energy surface. The method is proved to be effective by comparing these results with the experimental data.
