High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

M_(4)X_(3) MXenes:Application in Energy Storage Devices

MXene has garnered widespread recognition in the scientific com-munity due to its remarkable properties,including excellent thermal stability,high conductivity,good hydrophilicity and dispersibility,easy processability,tunable surface properties,and admirable flexibility.MXenes have been categorized into different families based on the number of M and X layers in M_(n+1)X_(n),such as M_(2)X,M_(3)X_(2),M_(4)X_(3),and,recently,M_(5)X_(4).Among these families,M_(2)X and M_(3)X_(2),par-ticularly Ti_(3)C_(2),have been greatly explored while limited studies have been given to M_(5)X_(4)MXene synthesis.Meanwhile,studies on the M_(4)X_(3)MXene family have developed recently,hence,demanding a compilation of evaluated studies.Herein,this review provides a systematic overview of the latest advancements in M_(4)X_(3)MXenes,focusing on their properties and applications in energy storage devices.The objective of this review is to provide guidance to researchers on fostering M_(4)X_(3)MXene-based nanomaterials,not only for energy storage devices but also for broader applications.

Exploring Nanoscale Perovskite Materials for Next‑Generation Photodetectors:A Comprehensive Review and Future Directions

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.

Surface properties of Al-doped ZnO thin film before and after CF_4/Ar plasma etching

Al-doped ZnO(AZO) is considered as an alternative to transparent conductive oxide materials.Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF_(4)/Ar ratio of 50:50 sccm. Regardless of the ratio of CF_(4) to Ar,the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF-4 increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.

Structure and Thermoelectric Properties of Nanostructured (Bi, Sb)₂Te₃(Review)

The investigation of the structure and thermoelectric properties of nanostructured solid solutions (Bi, Sb)2Te3 p-type has been carried out. The samples were obtained by grinding of original compositions in a planetary ball mill and by spark plasma sintering (SPS). Initial powder has an average particle size of 10 - 12 nm according to transmission electron microscopy, and the size of the coherent scattering region (CSR) obtained by X-ray line broadening. During sintering at Ts = 250°C - 400°C, the grain size and CSR increased, which was associated with the processes of recrystallization. The maximum of size distribution of CSR shifts to larger sizes when Ts increases so that no broadening of X-ray lines at Ts = 400°C can take place. At higher Ts, the emergence of new nanograins is observed. The formation of nanograins is conditioned by reducing of quantity of the intrinsic point defects produced in the grinding of the source materials. The study of the electrical conductivity and the Hall effect in a single crystal allows to estimate the mean free path of the holes-L in the single crystal Bi0.5Sb1.5Te3 which at room temperature is 2 - 5 nm (it is much smaller than the dimensions of CSR in the samples). The method for evaluation of L in polycrystalline samples is proposed. At room temperature, L is close to the mean free path in single crystals. Scattering parameter holes in SPS samples obtained from the temperature dependence of the Seebeck coefficient are within the measurement error equal to the parameter of the scattering of holes in a single crystal. The figure of merit ZT of SPS samples as a function of composition and sintering temperature has been investigated. Maximum ZT, equal to 1.05 at room temperature, is obtained for the composition Bi0.4Sb1.6Te3 at Ts = 500°C and a pressure of 50 MPa. The causes of an apparent increase in thermoelectric efficiency are discussed.

Practical Realization of a Hybrid Solution for Photovoltaic and Photothermal Conversion

In this paper, an idea and a realization of a hybrid Operational solar system is presented and practically verified discussed on the base of the performance and efficiency results, is confirmed. solution for photovoltaic and photothermal conversion is presented. by the series of experiments. Improvements of the construction are The synergy effect ofphotothermal and photovoltaic part cooperation

Tunneling via surface dislocation in W/β-Ga_(2)O_(3) Schottky barrier diodes

In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.

TiO2纳米结构在染料敏化太阳电池中的应用

利用纳米结构材料作为光阳极制备的染料敏化太阳电池被称为纳米结构染料敏化太阳电池(NDSSC)。一般而言,它由纳米结构金属氧化物半导体的光阳极、染料敏化剂,电解质和对电极等几个部分组成。目前,纳米结构光阳极的研究主要集中在如何优化设计和成功制备各种纳米结构的光阳极材料,以改善NDSSC的光电转换性能。本文着重介绍了各种TiO2纳米结构,例如TiO2晶粒薄膜、TiO2准一维纳米结构、TiO2纳米复合物膜层、TiO2核-壳纳米结构、TiO2量子点敏化结构以及串联电池结构等在NDSSC中的应用,并评论了它们最近的主要研究进展。

Perimeter Effects on Heavy Doping GaAs Diodes

The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally.The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying.The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction.The AlGaAs layers enhance the dark current.

Controllable Ultra Low-k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45 nm Node

By changing the air gap to a via-typed air gap, the height of the air gap is reduced up to about 50% compared to the height of the trench-typed air gap. The controllable （1 ≤h 〈 2.9） ultra low-k is also easily fabricated by adjusting the space of the via-typed air gap. The via-typed air gap makes the design margin better due to its lower height in the dense and narrow lines.

Programmable directional color dynamics using plasmonics

Adaptive multicolor filters have emerged as key components for ensuring color accuracy and resolution in outdoor visual devices.However,the current state of this technology is still in its infancy and largely reliant on liquid crystal devices that require high voltage and bulky structural designs.Here,we present a multicolor nanofilter consisting of multilayered‘active’plasmonic nanocomposites,wherein metallic nanoparticles are embedded within a conductive polymer nanofilm.These nanocomposites are fabricated with a total thickness below 100 nm using a‘lithography-free’method at the wafer level,and they inherently exhibit three prominent optical modes,accompanying scattering phenomena that produce distinct dichroic reflection and transmission colors.Here,a pivotal achievement is that all these colors are electrically manipulated with an applied external voltage of less than 1 V with 3.5 s of switching speed,encompassing the entire visible spectrum.Furthermore,this electrically programmable multicolor function enables the effective and dynamic modulation of the color temperature of white light across the warm-to-cool spectrum(3250 K-6250 K).This transformative capability is exceptionally valuable for enhancing the performance of outdoor optical devices that are independent of factors such as the sun’s elevation and prevailing weather conditions.

Mixed-dimensional stacked nanocomposite structures for a specific wavelength-selectable ambipolar photoresponse

Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to the potential to generate new optical properties.Here,we report on the unique optical characteristics of a devices with mixed dimensional vertically stacked structures based on tungsten diselenide(WSe_(2))/CdSeS QDs monolayer/molybdenum disulfide(MoS_(2))(2D/0D/2D).Specifically,it exhibits an ambipolar photoresponse characteristic,with a negative photoresponse observed in the 400-600 nm wavelength range and a positive photoresponse appeared at 700 nm wavelength.It resulted in the high negative responsivity of up to 52.22 mA·W^(−1)under 400 nm,which is 163 times higher than that of the photodetector without CdSeS QDs.We also demonstrated the negative photoresponse,which could be due to increased carrier collision probability and non-radiative recombination.Device modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent generation.Consequently,we discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum dots.Our study revealed interesting phenomenon in the mixed low-dimensional stacked structure and paved the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.

Microstructure and Optical Properties of Yttrium-doped Zinc Oxide(YZO) Nanobolts Synthesized by Hydrothermal Method

In this work, yttrium-doped zinc oxide （YZO） nanopowder was synthesized via hydrothermal precipitation- method. The microstructure and optical properties of yttrium-doped zinc oxide nanopowder were characterized, which confirmed the well-crystalline wurtzite hexagonal phase of ZnO. The yttrium- doped zinc oxide nanopowder grains formed the nanobolts of -400 nm in length and -900 nm in width. High resolution-transmission electron microscopy （HR-TEM） of the nanobolts revealed uniform lattice fringes and no visible faults and/or distortions. X-ray photoelectron spectroscopy （XPS） analysis con- firmed the presence of yttrium in the zinc oxide lattice, proving the contribution of yttrium on the microstructural and optical properties of the material. A strong ultra violet （UV） emission peak of the YZO exhibited a red shift compared to pure zinc oxide, which was ascribed to the defects and the for- mation of a shallow energy level caused bv the incorporation of yttrium.

Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation

Memristive heterostructures,composed of reduced graphene oxide with different degree of reduction,were demonstrated through a simple method of‘direct electron-beam writing’on graphene oxide.Irradiation with an electron beam at various doses and accelerating voltages made it possible to define highand low-conductivity graphene-oxide areas.The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range(<1 V).The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.

用于制备具有超光滑表面异质集成4英寸硅基砷化镓薄膜的高效离子剥离技术

在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电集成提供新的材料平台.本文基于对GaAs材料剥离机理的分析阐述,优化了GaAs薄膜转移工艺的离子注入条件.结果表明,相比于He离子单独注入,由于较小的热预算和注入后相对更低的缺陷密度,He/H离子共注入对于GaAs薄膜转移更高效.以Al2O3为键合介质层,通过优化的离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上.探索了包括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺,以将转移后GaAs薄膜的表面质量提高到可以高质量外延的水平.在400℃退火1 h后,转移的GaAs薄膜单晶质量进一步提高,X射线摇摆曲线的半峰全宽仅为89.03 arcsec.

Efficient fully laser-patterned flexible perovskite modules and solar cells based on low-temperature solution-processed SnO2/mesoporous-TiO2 electron transport layers

Efficient flexible perovskite solar cells and modules were developed using a combination of SnO2 and mesoporous-TiO2 as a fully solution-processed electron transport layer （ETL）. Cells using such ETLs delivered a maximum power conversion efficiency （PCE） of 14.8%, which was 30% higher than the PCE of cells with only SnO2 as the ETL. The presence of a mesoporous TiO2 scaffold layer over SnO2 led to higher rectification ratios, lower series resistances, and higher shunt resistances. The cells were also evaluated under 200 and 400 lx artificial indoor illumination and found to deliver maximum power densities of 9.77 μW/cm^2 （estimated PCE of 12.8%） and 19.2 μW/cm^2 （estimated PCE of 13.3%）, respectively, representing the highest values among flexible photovoltaic technologies reported so far. Furthermore, for the first time, a fully laser-patterned flexible perovskite module was fabricated using a complete three-step laser scribing procedure （P1, P2, P3） with a PCE of 8.8% over an active area of 12 cm^2 under an illumination of 1 sun.

Ferro-floating memory:Dual-mode ferroelectric floating memory and its application to in-memory computing

Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations.

Si-based InGaAs photodetectors on heterogeneous integrated substrate

In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.