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Weak Gate Effect in 1,3-Benzenedithiol Molecular Device
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作者 苏文勇 罗毅 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第4期246-249,共4页
We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effec... We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field. 展开更多
关键词 Condensed matter: electrical magnetic and optical Electronics and devices Surfaces interfaces and thin films
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