Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit charact...Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions.A high-current Si insulated gate bipolar transistor is used as a circuit breaker in the test circuit rather than the usual short-circuit test conducted without a circuit breaker.The test platform with a circuit breaker does not influence the calculation results regarding the shortcircuitwithstand time and energy,but the SiCMOSFETwill switch off after failure in a very short time.In addition,the degree of failure will be limited and confined to a small area,such that the damage to the chip will be clearly observable,which is significant for short-circuit failure analysis.展开更多
Nowadays control systems can find applications in many areas, like aerospace, motion tracking, chemical engineering, physics, biology, economics. To improve control performance is a perpetual goal. With recent progres...Nowadays control systems can find applications in many areas, like aerospace, motion tracking, chemical engineering, physics, biology, economics. To improve control performance is a perpetual goal. With recent progresses of computing technologies, better control performance can be achieved by more judicious control strategies based on more precise and more complicated, such as time-varying, nonlinear, models. Another trend to improve control performance is built upon the divide-and-conquer philosophy, i.e., a complicated control task is cooperatively accomplished by multiple controllers/agents, instead of a single super-powerful controller. This trend is made possible due to great advances in communication, which enable the information exchange among agents and may unite the less powerful agents. The cost for such control performance improvement is higher spatial complexity of control systems.展开更多
基金This work was supported by the Shenzhen Science and Technology Program[Grant No.KQTD2017033016491218].
文摘Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions.A high-current Si insulated gate bipolar transistor is used as a circuit breaker in the test circuit rather than the usual short-circuit test conducted without a circuit breaker.The test platform with a circuit breaker does not influence the calculation results regarding the shortcircuitwithstand time and energy,but the SiCMOSFETwill switch off after failure in a very short time.In addition,the degree of failure will be limited and confined to a small area,such that the damage to the chip will be clearly observable,which is significant for short-circuit failure analysis.
文摘Nowadays control systems can find applications in many areas, like aerospace, motion tracking, chemical engineering, physics, biology, economics. To improve control performance is a perpetual goal. With recent progresses of computing technologies, better control performance can be achieved by more judicious control strategies based on more precise and more complicated, such as time-varying, nonlinear, models. Another trend to improve control performance is built upon the divide-and-conquer philosophy, i.e., a complicated control task is cooperatively accomplished by multiple controllers/agents, instead of a single super-powerful controller. This trend is made possible due to great advances in communication, which enable the information exchange among agents and may unite the less powerful agents. The cost for such control performance improvement is higher spatial complexity of control systems.
