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芯片强度改进——减薄前划片+等离子包蚀刻(英文) 被引量:1
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作者 Kawai Nitta 《电子工业专用设备》 2005年第10期35-38,共4页
对于目前的多层芯片封装和IC卡, 不仅在组装工艺的提高良品率中要求芯片强度高, 而且在封装之后还要求有更好的使用期限。根据更薄晶圆的要求, 引入了消除晶圆减薄引起损伤的各种应力解除方法, 但在应力解除之后的划片中又引起了机械损... 对于目前的多层芯片封装和IC卡, 不仅在组装工艺的提高良品率中要求芯片强度高, 而且在封装之后还要求有更好的使用期限。根据更薄晶圆的要求, 引入了消除晶圆减薄引起损伤的各种应力解除方法, 但在应力解除之后的划片中又引起了机械损伤, 通过这些方法不可能使芯片强度达到最大。因此, 我们开发了一种结合减薄前划片(DBG)的等离子蚀刻的应力解除方法。减薄前已完成划片工序的晶圆可在其底面和划切面同时用氟基蚀刻, 从而消除机械损伤。我们已能够通过比较经历过常规应力解除芯片来确认被改进芯片强度的平均、最小、最大值。可以预期这项技术将被用于提高今后将进一步扩展的IC卡(即信用卡, 身份证)的寿命要求。 展开更多
关键词 IC卡 芯片减薄 芯片强度 应力消除 IC卡寿命
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Multilayer Graphene-Coated Silicon Carbide Nanowire Formation Under Defocused Laser Irradiation
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作者 Kanon Minami Kyosuke Kobinata Jiwang Yan 《Nanomanufacturing and Metrology》 EI 2023年第3期12-28,共17页
Graphene-coated silicon carbide(SiC@C)core-shell nanostructures have attracted attention in the fields of energy storage and nanoelectronics.In this study,multilayer graphene-coated silicon carbide(SiC)nanowires were ... Graphene-coated silicon carbide(SiC@C)core-shell nanostructures have attracted attention in the fields of energy storage and nanoelectronics.In this study,multilayer graphene-coated silicon carbide(SiC)nanowires were obtained through the laser irradiation of a mixture target of graphite powder and silicon(Si)grinding sludge discharged from Si wafer manufacturing.Laser irradiation was performed using an ytterbium(Yb)fiber pulsed laser with a pulse width of 10 ms and a wavelength of 1070 nm with various defocus distances.The effect of laser defocusing on the morphology of the generated nanostructures was investigated.Results showed that nanowires were produced under the defocused conditions,and nanoparticles were observed at the on-focus position.The products obtained under all defocused conditions showed a core-shell structure,and the SiC nanowires were covered by graphene layers.The aspect ratio of the nanowires increased with the defocus distance.Observation of the laser-induced plume using a high-speed camera showed that when the laser was defocused,the plume propagation speed slowed down,and the shape of the plume changed to a swirling vortex.The nanowire formation was closely related to the propagation speed and shape variation of the plume.This successful production of SiC@C core-shell nanowires from Si waste opens up the possibility of the sustainable development of new materials for energy storage and nanoelectronics. 展开更多
关键词 NANOMATERIAL Laser irradiation Silicon carbide NANOWIRE Silicon sludge Core-shell structure Multilayer graphene
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