Lateral current spreading in the 4H-SiC Schottky barrier diode(SBD)chip is investigated.The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated.The results indicate that there is a fixed sp...Lateral current spreading in the 4H-SiC Schottky barrier diode(SBD)chip is investigated.The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated.The results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific chip.The linear specific spreading resistance at the on-state is calculated to be 8.6Ω/cm in the fabricated chips.The proportion of the lateral spreading current in total forward current(Psp)is related to anode voltage and the chip area.Psp is increased with the increase in the anode voltage during initial on-state and then tends to a stable value.The stable values of Psp of the two fabricated chips are 32%and 54%.Combined with theoretical analysis,the proportion of the terminal region and scribing trench in a whole chip(Ksp)is also calculated and compared with Psp.The Ksp values of the two fabricated chips are calculated to be 31.94%and 57.75%.The values of Ksp and Psp are close with each other in a specific chip.The calculated Ksp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2,the value of Psp would be lower than 10%.展开更多
To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as disl...To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH)to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH)is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.展开更多
基金This work was supported in part by National Natural Science Foundation of China(62004161)in part by Natural Science Basic Research Plan in Shaanxi Province of China(2020JQ-636)+2 种基金in part by Scientific Research Project of Education Department of Shaanxi Province(20JK0796)in part by Youth talent lift project of Xi’an Science and Technology Association(095920201318)in part by Bidding Project of Shanxi Province(20201101017).
文摘Lateral current spreading in the 4H-SiC Schottky barrier diode(SBD)chip is investigated.The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated.The results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific chip.The linear specific spreading resistance at the on-state is calculated to be 8.6Ω/cm in the fabricated chips.The proportion of the lateral spreading current in total forward current(Psp)is related to anode voltage and the chip area.Psp is increased with the increase in the anode voltage during initial on-state and then tends to a stable value.The stable values of Psp of the two fabricated chips are 32%and 54%.Combined with theoretical analysis,the proportion of the terminal region and scribing trench in a whole chip(Ksp)is also calculated and compared with Psp.The Ksp values of the two fabricated chips are calculated to be 31.94%and 57.75%.The values of Ksp and Psp are close with each other in a specific chip.The calculated Ksp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2,the value of Psp would be lower than 10%.
基金Project supported by the Xi'an Science and Technology Program,China(Grant No.2019217814GXRC014CG015-GXYD14.3)the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials,Ministry of Education,China(Grant No.Kdxkf2019-01).
文摘To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH)to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH)is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.
