Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube....Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.展开更多
The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuI...The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.展开更多
基金campus France and French Cultural Center in Cairo for the financial support
文摘Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.
文摘The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.
