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Effect of the post-annealing temperature on the thermal-decomposed NiO_(x) hole contact layer for perovskite solar cells
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作者 Yuxiao Guo Xingtian Yin +6 位作者 Jie Liu Wei Chen Sen Wen Meidan Que Yapeng Tian Yawei Yang Wenxiu Que 《Journal of Advanced Dielectrics》 CAS 2018年第1期50-55,共6页
A hysteresis-less inverted perovskite solar cell(PSC)with power conversion efficiency(PCE)of 13.57%was successfully achieved based on the thermal-decomposed NiO_(x) hole contact layer,possessing better electron blocki... A hysteresis-less inverted perovskite solar cell(PSC)with power conversion efficiency(PCE)of 13.57%was successfully achieved based on the thermal-decomposed NiO_(x) hole contact layer,possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position.Herein,the transparent and high-crystalline NiO_(x) film is prepared by thermal-decomposing of the solution-derived Ni(OH)_(2) film in our study,which is then employed as hole transport layer(HTL)of the organic–inorganic hybrid PSCs.Reasonably,the post-annealing treatment,especially for the annealing temperature,could greatly affect the Ni(OH)_(2) decomposition process and the quality of decomposed NiO_(x) nanoparticles.The vital NiO_(x) HTLs with discrepant morphology,crystallinity and transmission certainly lead to a wide range of device performance.As a result,an annealing process of 400℃/2 h significantly promotes the photovoltaic properties of the NiO_(x) layer and the further device performance. 展开更多
关键词 NiO_(x) hole transport layer thermally decomposing annealing temperature perovskite solar cell
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