InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesse...InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film. The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.展开更多
The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films...The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.展开更多
文摘InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film. The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.
文摘The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
