Controlling the morphology of the perovskite film is an effective way to improve the photoelectric conversion efficiency of solar cell devices. In this work, we study the influence of the crystallization condition on ...Controlling the morphology of the perovskite film is an effective way to improve the photoelectric conversion efficiency of solar cell devices. In this work, we study the influence of the crystallization condition on PbI2 morphology and the performances of resulting perovskite solar cells. The PbI2 morphologies and coverage rates under different formation conditions such as solvent effect, slow crystallization at room temperature and substrate-preheating, are found to be of crucial importance for preparing high-quality perovskite. The generation of loosely packed disk-like PbI2 film with interpenetrating nanopores promotes the penetration of methyl ammonium iodide （MAI）, leading to a better crystallinity of the perovskite film, and a best repeatable power conversion efficiency of 11.59% is achieved when methyl ammonium lead triiodide （CH3NH3PbI3, MAPbI3） is employed. In addition, an excellent device is also obtained with an efficiency of more than 93% to remain after working for 43 days.展开更多
The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region ...The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap.In this paper,the thin-film growth mechanism and process optimization of Zn(O,S)films fabricated using the chemical bath deposition method are sys-tematically investigated.The thickness and quality of Zn(O,S)films were found to be strongly affected by the concentration variation of the precursor chemicals.It was also revealed that different surface morphologies of Zn(O,S)films would appear if the reaction time were changed and,subsequently,the optimum reaction time was defined.The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high.In addition,to further improve the film quality,an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S)thin film was improved by an ammonia etching process followed by an annealing process.For com-parison purposes,both Zn(O,S)-based and CdS-based devices were fabricated and characterized.The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61404007)the Beijing Talents Fund,China(Grant No.2015000021223ZK38)
文摘Controlling the morphology of the perovskite film is an effective way to improve the photoelectric conversion efficiency of solar cell devices. In this work, we study the influence of the crystallization condition on PbI2 morphology and the performances of resulting perovskite solar cells. The PbI2 morphologies and coverage rates under different formation conditions such as solvent effect, slow crystallization at room temperature and substrate-preheating, are found to be of crucial importance for preparing high-quality perovskite. The generation of loosely packed disk-like PbI2 film with interpenetrating nanopores promotes the penetration of methyl ammonium iodide （MAI）, leading to a better crystallinity of the perovskite film, and a best repeatable power conversion efficiency of 11.59% is achieved when methyl ammonium lead triiodide （CH3NH3PbI3, MAPbI3） is employed. In addition, an excellent device is also obtained with an efficiency of more than 93% to remain after working for 43 days.
基金financially supported by National Key R&D Program of China(grant no.2018YFB1500200).
文摘The Zn(O,S)thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se_(2)(CIGS)thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap.In this paper,the thin-film growth mechanism and process optimization of Zn(O,S)films fabricated using the chemical bath deposition method are sys-tematically investigated.The thickness and quality of Zn(O,S)films were found to be strongly affected by the concentration variation of the precursor chemicals.It was also revealed that different surface morphologies of Zn(O,S)films would appear if the reaction time were changed and,subsequently,the optimum reaction time was defined.The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high.In addition,to further improve the film quality,an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S)thin film was improved by an ammonia etching process followed by an annealing process.For com-parison purposes,both Zn(O,S)-based and CdS-based devices were fabricated and characterized.The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.
