Lithium sulfur batteries are regarded as a promising candidate for high-energy-density energy storage devices.However,the lithium metal anode in lithium-sulfur batteries encounters the problem of lithium dendrites and...Lithium sulfur batteries are regarded as a promising candidate for high-energy-density energy storage devices.However,the lithium metal anode in lithium-sulfur batteries encounters the problem of lithium dendrites and lithium metal consumption caused by polysulfide corrosion.Herein we design a dualfunction PMMA/PPC/LiNO3composite as an artificial solid electrolyte interphase(PMCN-SEI)to protect Li metal anode.This SEI offers multiple sites of C=O for polysulfide anchoring to constrain corrosion of Li metal anode.The lithiated polymer group and Li3N in PMCN-SEI can homogenize lithium-ion deposition behavior to achieve a dendrite-free anode.As a result,the PMCN-SEI protected Li metal anode enables the Li||Li symmetric batteries to maintain over 300 cycles(1300 h)at a capacity of 5 m Ah cm^(-2),corresponding to a cumulative capacity of 3.25 Ah cm^(-2).Moreover,Li-S batteries assembled with 20μm of Li metal anode(N/P=1.67)still deliver an initial capacity of 1166 m A h g-1at 0.5C.Hence,introducing polycarbonate polymer/inorganic composite SEI on Li provides a new solution for achieving the high energy density of Li-S batteries.展开更多
Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and ...Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.展开更多
The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots (QDs) system are studied. AFM images show that the change of the ...The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots (QDs) system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence (PL) spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.展开更多
The anomalous hysteresis in a perovskite solar cell induced by an asymmetric field is confirmed by a capacitance–voltage measurement. By applying several cycles of alternating reverse and forward scans, this hysteres...The anomalous hysteresis in a perovskite solar cell induced by an asymmetric field is confirmed by a capacitance–voltage measurement. By applying several cycles of alternating reverse and forward scans, this hysteresis phenomenon is obviously alleviated, resulting in a hysteresis-less state in the perovskite solar cell. Meanwhile, the open-circuit voltage and power conversion efficiency of the perovskite solar cell are enhanced by 55.74% and 61.30%, respectively, while the current density and fill factor keep almost invariable. The operation of alleviating hysteresis is essential for further research and is likely to bring in performance gains.展开更多
We investigate the performances of the near-ultraviolet(about 350 nm-360 nm) light-emitting diodes(LEDs) each with specifically designed irregular sawtooth electron blocking layer(EBL) by using the APSYS simulat...We investigate the performances of the near-ultraviolet(about 350 nm-360 nm) light-emitting diodes(LEDs) each with specifically designed irregular sawtooth electron blocking layer(EBL) by using the APSYS simulation program.The internal quantum efficiencies(IQEs),light output powers,carrier concentrations in the quantum wells,energy-band diagrams,and electrostatic fields are analyzed carefully.The results indicate that the LEDs with composition-graded pAlxGa1-xN irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs.The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface,which results in less electron leakage and better hole injection efficiency,thus reducing efficiency droop and enhancing the radiative recombination rate.展开更多
The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0...The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.展开更多
A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes(LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. ...A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes(LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells(QWs) approaching the p-Ga N side, the uniformity of distribution of carriers and radiative recombination rate for the nonpolar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.展开更多
LiBr as a promising redox mediator(RM)has been applied in Li-O_(2)batteries to improve oxygen evolution reaction kinetics and reduce overpotentials.However,the redox shuttle of Br_(3)^-can induce the unexpected reacti...LiBr as a promising redox mediator(RM)has been applied in Li-O_(2)batteries to improve oxygen evolution reaction kinetics and reduce overpotentials.However,the redox shuttle of Br_(3)^-can induce the unexpected reactions and thus cause the degradation of LiBr and the corrosion of Li anode,resulting in the poor cyclability and the low round-trip efficiency.Herein,MgBr_(2)is firstly employed with dual functions for Li-O_(2)batteries,which can serve as a RM and a SEI film-forming agent.The Br^(–)is beneficial to facilitating the decomposition of Li_(2)O_(2)and thus decreasing the overpotential.Additionally,a uniform SEI film containing Mg and MgO generates on Li anode surface by the in-situ spontaneous reactions of Mg^(2+)and Li anode in an O_(2)environment,which can suppress the redox shuttle of Br_(3)^-and improve the interface stability of Li anode and electrolyte.Benefiting from these advantages,the cycle life of Li-O_(2)battery with MgBr_(2)electrolyte is significantly extended.展开更多
Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were chara...Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of (002). The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%(molar fraction). Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%(molar fraction).展开更多
The characteristics ofnitride-based blue light-emitting diodes (LEDs) with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band di- agr...The characteristics ofnitride-based blue light-emitting diodes (LEDs) with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band di- agrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AIGaN barriers are replaced by AlGaN composition-graded barriers.展开更多
基金supported by the Jilin Province Science and Technology Department Program(YDZJ202201ZYTS304)the Science and Technology Project of Jilin Provincial Education Department(JJKH20220428KJ)+3 种基金the Jilin Province Science and Technology Department Program(YDZJ202101ZYTS047)the National Natural Science Foundation of China(21905110,21905041,22279045,22102020)the Special foundation of Jilin Province Industrial Technology Research and Development(2019C042)the Fundamental Research Funds for the Central Universities(2412020FZ008)。
文摘Lithium sulfur batteries are regarded as a promising candidate for high-energy-density energy storage devices.However,the lithium metal anode in lithium-sulfur batteries encounters the problem of lithium dendrites and lithium metal consumption caused by polysulfide corrosion.Herein we design a dualfunction PMMA/PPC/LiNO3composite as an artificial solid electrolyte interphase(PMCN-SEI)to protect Li metal anode.This SEI offers multiple sites of C=O for polysulfide anchoring to constrain corrosion of Li metal anode.The lithiated polymer group and Li3N in PMCN-SEI can homogenize lithium-ion deposition behavior to achieve a dendrite-free anode.As a result,the PMCN-SEI protected Li metal anode enables the Li||Li symmetric batteries to maintain over 300 cycles(1300 h)at a capacity of 5 m Ah cm^(-2),corresponding to a cumulative capacity of 3.25 Ah cm^(-2).Moreover,Li-S batteries assembled with 20μm of Li metal anode(N/P=1.67)still deliver an initial capacity of 1166 m A h g-1at 0.5C.Hence,introducing polycarbonate polymer/inorganic composite SEI on Li provides a new solution for achieving the high energy density of Li-S batteries.
文摘Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.
基金Supported by the Science and Technology Planning Projects of Guangdong Province under Grant Nos 2014B050505020,2015B010114007 and 2014B090904045the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20134407110008+1 种基金the Guangzhou Science and Technology Project of Guangdong Province under Grant No 2016201604030027the Zhongshan Science and Technology Project of Guangdong Province under Grant No 2013B3FC0003
文摘The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots (QDs) system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence (PL) spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.
基金supported by the National Natural Science Foundation of China(Grant Nos.11474105 and 51172079)the Science and Technology Program of Guangdong Province,China(Grant Nos.2015B090903078 and 2015B010105011)+1 种基金the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)
文摘The anomalous hysteresis in a perovskite solar cell induced by an asymmetric field is confirmed by a capacitance–voltage measurement. By applying several cycles of alternating reverse and forward scans, this hysteresis phenomenon is obviously alleviated, resulting in a hysteresis-less state in the perovskite solar cell. Meanwhile, the open-circuit voltage and power conversion efficiency of the perovskite solar cell are enhanced by 55.74% and 61.30%, respectively, while the current density and fill factor keep almost invariable. The operation of alleviating hysteresis is essential for further research and is likely to bring in performance gains.
基金supported by the National Natural Science Foundation of China(Grant Nos.11474105 and 51172079)the Science and Technology Program of Guangdong Province,China(Grant Nos.2015B090903078 and 2015B010105011)+2 种基金the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT13064)the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010105025)
文摘We investigate the performances of the near-ultraviolet(about 350 nm-360 nm) light-emitting diodes(LEDs) each with specifically designed irregular sawtooth electron blocking layer(EBL) by using the APSYS simulation program.The internal quantum efficiencies(IQEs),light output powers,carrier concentrations in the quantum wells,energy-band diagrams,and electrostatic fields are analyzed carefully.The results indicate that the LEDs with composition-graded pAlxGa1-xN irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs.The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface,which results in less electron leakage and better hole injection efficiency,thus reducing efficiency droop and enhancing the radiative recombination rate.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant No.2017B010127001)+1 种基金the Science and Technology of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Education Department Funding of Guangdong Province,China(Grant No.2017KZDXM022)
文摘The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.
基金Project supported by the National Natural Science Foundation of China(Grant No.51172079)the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002)+1 种基金the Science and Technology Program of Guangzhou,China(Grant No.2011J4300018)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)
文摘A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes(LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells(QWs) approaching the p-Ga N side, the uniformity of distribution of carriers and radiative recombination rate for the nonpolar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.
基金supported by the National Natural Science Foundation of China(Nos.21978110 and 52171210)the Jilin Province Science and Technology Department Program(Nos.YDZJ202101ZYTS047,20220201130GX and 20200201187JC)the Science and Technology Project of Jilin Provincial Education Department(No.JJKH20210444KJ)。
文摘LiBr as a promising redox mediator(RM)has been applied in Li-O_(2)batteries to improve oxygen evolution reaction kinetics and reduce overpotentials.However,the redox shuttle of Br_(3)^-can induce the unexpected reactions and thus cause the degradation of LiBr and the corrosion of Li anode,resulting in the poor cyclability and the low round-trip efficiency.Herein,MgBr_(2)is firstly employed with dual functions for Li-O_(2)batteries,which can serve as a RM and a SEI film-forming agent.The Br^(–)is beneficial to facilitating the decomposition of Li_(2)O_(2)and thus decreasing the overpotential.Additionally,a uniform SEI film containing Mg and MgO generates on Li anode surface by the in-situ spontaneous reactions of Mg^(2+)and Li anode in an O_(2)environment,which can suppress the redox shuttle of Br_(3)^-and improve the interface stability of Li anode and electrolyte.Benefiting from these advantages,the cycle life of Li-O_(2)battery with MgBr_(2)electrolyte is significantly extended.
基金Supported by the National Natural Science Foundation of China(Nos.51002018, 51302024), the Program for Liaoning Excellent Talents in University, China(No.LJQ20122038), the Higher Specialized Research Fund for the Doctoral Program of China(No.20122124110004), the Dalian Science and Technology Plan Project, China(No.2010J21DW008) and the Qinghai Provincial Science and Technology Project, China(No.2012-Z-701).
文摘Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of (002). The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%(molar fraction). Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%(molar fraction).
基金Project supported by the National High Technology Program of China(Nos.2011AA03A105,2013AA03A101)the National Natural Science Foundation of China(Nos.61306051,61306050,11474105)+5 种基金the Beijing Municipal Science and Technology Project(No.D12110300140000)the National Basic Research Program of China(No.2011CB301902)the Industry-Academia-Research Union Special Fund of Guangdong Province of China(No.2012B091000169)the Science&Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund of China(No.2012B090600038)the Specialized Research Fund for the Doctoral Program of Higher Education(No.20134407110008)the Science research innovation foundation of South China Normal University of China(No.2013kyjj041)
文摘The characteristics ofnitride-based blue light-emitting diodes (LEDs) with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band di- agrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AIGaN barriers are replaced by AlGaN composition-graded barriers.