期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits
1
作者 Olivier Valorge Fengyuan Sun +3 位作者 Jean-Etienne Lorival Mohamed Abouelatta-Ebrahim Francis Calmon Christian Gontrand 《Circuits and Systems》 2012年第2期126-135,共10页
3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread ... 3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread out;our ultimate goal will to study substrate noise via impedance field method. For this, our approach is twofold: a compact Green function or a Transmission Line Model over a multi-layered substrate is derived by solving Poisson’s equation analytically. The Discrete Cosine Transform (DCT) and its variations are used for rapid evaluation. Using this technique, the substrate coupling and loss in IC’s can be analyzed. We implement our algorithm in MATLAB;it permits to extract impedances between any pair of embedded contacts. Comparisons are performed using finite element methods. 展开更多
关键词 Through Silicon Via (TSV) Green’s Function Transmission Line Model Radio Frequency (RF) Transfer IMPEDANCE EXTRACTION
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部