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Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
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作者 C.Trager-Cowan A.Alasmari +33 位作者 W.Avis J.Bruckbauer P.R.Edwards B.Hourahine S.Kraeusel G.Kusch R.Johnston G.Naresh-Kumar R.W.Martin M.Nouf-Allehiani E.Pascal L.Spasevski D.Thomson S.Vespucci P.J.Parbrook M.D.Smith J.Enslin F.Mehnke M.Kneissl C.Kuhn T.Wernicke S.Hagedorn A.Knauer V.Kueller S.Walde M.Weyers P.-M.Coulon P.A.Shields Y.Zhang L.Jiu Y.Gong R.M.Smith T.Wang A.Winkelmann 《Photonics Research》 SCIE EI CSCD 2019年第11期I0017-I0026,共10页
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hypers... In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques. 展开更多
关键词 ELECTRON NITRIDE DOPING
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