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Realization of Potassium Chloride Sensor Using Photonic Crystal Fiber 被引量:1
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作者 Gopinath Palai Nilambar Mudului +1 位作者 Santosh K. Sahoo Sukanta K. Tripathy 《Soft Nanoscience Letters》 2013年第4期16-19,共4页
We propose to measure the concentration of potassium chloride using photonic crystal fiber having circular air holes of diameter 400 nm. The principle of measurement is based on the linear variation of the transmitted... We propose to measure the concentration of potassium chloride using photonic crystal fiber having circular air holes of diameter 400 nm. The principle of measurement is based on the linear variation of the transmitted field emerging from the PCF with respect to concentration of potassium chloride. Field distribution in photonic crystal structure is simulated using plane wave expansion (PWE) method. Simulation result reveals that the intensity of transmitted light varies linearly with respect to concentration of potassium chloride filled in the air holes. 展开更多
关键词 PCF POTASSIUM CHLORIDE PWE
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Modelling overall transmitted efficiency at 1550 nm for polymer grating Silicon-on-insulator structure with defect
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作者 G. PALAI T. K. DHIR, B. NATH S. L. PATRA 《Frontiers of Optoelectronics》 EI CSCD 2013年第2期153-159,共7页
The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon (N-T/T-N) grating Silicon- on-insulator (SOI) structure with defect in even and odd position was investigated in this paper. Different ty... The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon (N-T/T-N) grating Silicon- on-insulator (SOI) structure with defect in even and odd position was investigated in this paper. Different types of losses, such as absorption, reflection and diffraction, were considered to find out the overall transmitted efficiency. The absorption loss of both Nylon-Teflon (N-T) and Teflon-Nylon (T-N) structure is zero at the wavelength of 1550 nm. Reflectance of these structures was analyzed by using plane wave expansion (PWE) method. Simulation result showed that reflectance as well as transmittance was varied linearly with respect to defect at odd and even positions. Simulation is also done for the diffraction efficiency at 1550nm with respect to detuning from Bragg's angle, which was ranged from -0.4 rad to + 0.4 rad. Finally, it was found that overall transmitted efficiency increased as even defect position varied from 2nd to 10th for both N-T/T-N grating SOI structure. Similarly, the overall transmitted efficiency decreased as odd defect position changed from 3rd to l lth for both N-T/T-N grating SOI structure. 展开更多
关键词 overall transmitted efficiency Nylon-Teflon/ Teflon-Nylon (N-T/T-N) grating plane wave expansion (PWE) Silicon-on-insulator (SOl)
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