Recently,‘Liquid crystal display(LCD)vs.organic light-emitting diode(OLED)display:who wins?’has become a topic of heated debate.In this review,we perform a systematic and comparative study of these two flat panel di...Recently,‘Liquid crystal display(LCD)vs.organic light-emitting diode(OLED)display:who wins?’has become a topic of heated debate.In this review,we perform a systematic and comparative study of these two flat panel display technologies.First,we review recent advances in LCDs and OLEDs,including material development,device configuration and system integration.Next we analyze and compare their performances by six key display metrics:response time,contrast ratio,color gamut,lifetime,power efficiency,and panel flexibility.In this section,we focus on two key parameters:motion picture response time(MPRT)and ambient contrast ratio(ACR),which dramatically affect image quality in practical application scenarios.MPRT determines the image blur of a moving picture,and ACR governs the perceived image contrast under ambient lighting conditions.It is intriguing that LCD can achieve comparable or even slightly better MPRT and ACR than OLED,although its response time and contrast ratio are generally perceived to be much inferior to those of OLED.Finally,three future trends are highlighted,including high dynamic range,virtual reality/augmented reality and smart displays with versatile functions.展开更多
This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.展开更多
The interracial Si nano-pyralnid-enhanced electroluminescence （EL） of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor （MOS） diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm^2, output power of 16 nW...The interracial Si nano-pyralnid-enhanced electroluminescence （EL） of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor （MOS） diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm^2, output power of 16 nW, and lifetime of 10 h is reported.展开更多
Wavelength tunable photoluminescence （PL） of Si-rich silicon nitride （SRSN） film with buried Si nanocrystals （Si-ncs） grown by plasma enhanced chemical vapor deposition （PECVD） under Sill4 and NH3 environment ...Wavelength tunable photoluminescence （PL） of Si-rich silicon nitride （SRSN） film with buried Si nanocrystals （Si-ncs） grown by plasma enhanced chemical vapor deposition （PECVD） under Sill4 and NH3 environment is investigated. Intense broadband visible emissions tunable from blue to red can be obtained from the as-deposited SiNs thin films with increasing NH3 flow rate from 150 to 250 sccm and detuning the SiH4/NH3 flow ratio during deposition. To date, the normalized PL wavelength of SiNx films after anneal- ing could be detuned over the range of 385-675 nm by decreasing the NH3 flow rate, corresponding to an enlargement on Si-nc size from 1.5-2 to 4-5 nm. The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition. In addition, the PL intensity is monotonically increasing with the blue shift of PL wavelength due to the increasing density of small-size Si-ncs. The ITO/SiNx/p-Si/Al diode reveals highly resistive property with the turn-on voltage and power-voltage slope of only 20 V and 0.18 nW/V, respectively. The turn-on voltage can further reduce from 20 to 3.8 V by improving the carrier injection efficiency with p-type Si nano-rods.展开更多
Enhanced near-infrared （NIR） electroluminescence （EL） of a metal-oxide-semiconductor light emitting device （MOSLED） made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser ...Enhanced near-infrared （NIR） electroluminescence （EL） of a metal-oxide-semiconductor light emitting device （MOSLED） made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing （RTA） MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm^2 is preliminarily reported.展开更多
基金AFOSR for partial financial support under contract No.FA9550-14-1-0279.
文摘Recently,‘Liquid crystal display(LCD)vs.organic light-emitting diode(OLED)display:who wins?’has become a topic of heated debate.In this review,we perform a systematic and comparative study of these two flat panel display technologies.First,we review recent advances in LCDs and OLEDs,including material development,device configuration and system integration.Next we analyze and compare their performances by six key display metrics:response time,contrast ratio,color gamut,lifetime,power efficiency,and panel flexibility.In this section,we focus on two key parameters:motion picture response time(MPRT)and ambient contrast ratio(ACR),which dramatically affect image quality in practical application scenarios.MPRT determines the image blur of a moving picture,and ACR governs the perceived image contrast under ambient lighting conditions.It is intriguing that LCD can achieve comparable or even slightly better MPRT and ACR than OLED,although its response time and contrast ratio are generally perceived to be much inferior to those of OLED.Finally,three future trends are highlighted,including high dynamic range,virtual reality/augmented reality and smart displays with versatile functions.
文摘This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.
文摘The interracial Si nano-pyralnid-enhanced electroluminescence （EL） of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor （MOS） diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm^2, output power of 16 nW, and lifetime of 10 h is reported.
基金the National Natural Science Foundation of China(51873158,51573141,91833304 and 91433201)the National Key R&D Program of China(2016YFB0401002)+4 种基金Shenzhen Science and Technolgy Program(KQTD20170330110107046 and JCYJ20190808151209557)the Key Technological Innovation Program of Hubei Province(2018AAA013)the Natural Science Foundation for Distinguished Young Scholars of Hubei Province(2017CFA033)the support from the Ministry of Science and Technology of Taiwan(MOST 107-2221-E-002-160-MY3 and 108-2221-E-002-148-MY3)the post-doctoral fellowship from the Ministry of Education(MOE)of Taiwan。
基金supported by the National Science Council under Grants No. NSC97-2221-E-002-055 and NSC97-ET-7-002-007-ET.
文摘Wavelength tunable photoluminescence （PL） of Si-rich silicon nitride （SRSN） film with buried Si nanocrystals （Si-ncs） grown by plasma enhanced chemical vapor deposition （PECVD） under Sill4 and NH3 environment is investigated. Intense broadband visible emissions tunable from blue to red can be obtained from the as-deposited SiNs thin films with increasing NH3 flow rate from 150 to 250 sccm and detuning the SiH4/NH3 flow ratio during deposition. To date, the normalized PL wavelength of SiNx films after anneal- ing could be detuned over the range of 385-675 nm by decreasing the NH3 flow rate, corresponding to an enlargement on Si-nc size from 1.5-2 to 4-5 nm. The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition. In addition, the PL intensity is monotonically increasing with the blue shift of PL wavelength due to the increasing density of small-size Si-ncs. The ITO/SiNx/p-Si/Al diode reveals highly resistive property with the turn-on voltage and power-voltage slope of only 20 V and 0.18 nW/V, respectively. The turn-on voltage can further reduce from 20 to 3.8 V by improving the carrier injection efficiency with p-type Si nano-rods.
文摘Enhanced near-infrared （NIR） electroluminescence （EL） of a metal-oxide-semiconductor light emitting device （MOSLED） made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing （RTA） MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm^2 is preliminarily reported.
