The magnetic and electronic transport properties manipulated by spin-orbit torque have been devoted much attention as they show a great promise for future spintronic devices.Here,the spin dependent transport propertie...The magnetic and electronic transport properties manipulated by spin-orbit torque have been devoted much attention as they show a great promise for future spintronic devices.Here,the spin dependent transport properties of the facing-target sputtered Pt/Mn_(4)N bilayers on MgO(001)substrates have been investigated systematically.The Hall resistivity of Pt/Mn_(4)N bilayers is strongly dependent on temperature,applied current intensity,Mn_(4)N and Pt layer thicknesses.The temperature-dependent sign reversal of anomalous Hall resistivity appears in Pt/Mn_(4)N bilayers,which is dominated by the competition between the magnetic proximity and spin Hall effects.Besides,the magnitude of anomalous Hall resistivity can be manipulated by applied current density.The critical and saturation currents are related to Mn_(4)N and Pt layer thicknesses.Furthermore,a Dzyaloshinskii-Moriya interaction coefficient(D)of 5.63 mJ·m^(-2)is calculated in Pt/Mn_(4)N/MgO systems.The details of the anomalous Hall effects in Pt/Mn_(4)N bilayers are helpful to understand the interfacial effects between heavy metals and ferrimagnets.展开更多
Magnetic skyrmions are vortex-like swirling spin textures that are promising candidates for carrying information bits in future magnetic memories or logic circuits.To build skyrmionic devices,researchers must electric...Magnetic skyrmions are vortex-like swirling spin textures that are promising candidates for carrying information bits in future magnetic memories or logic circuits.To build skyrmionic devices,researchers must electrically manipulate magnetic skyrmions to enable easy integration into modern semiconductor technology.This operation generally uses a spin-polarized current,which unavoidably causes high energy dissipation and Joule heating.Thus,the electric-field strategy is a hopeful alternative for electrically manipulating the skyrmions due to the strategy’s negligible Joule heating and low energy cost.In this review,we systematically summarize the theoretical and experimental development of the electricalfield manipulation of magnetic skyrmions over the past decade.We review the following magnetic systems and physical mechanisms:(ⅰ)ultra-thin multilayer films with accumulation and release of interfacial charge,(ⅱ)singlephase multiferroic material with magneto-electric coupling,(ⅲ)ferromagnetic/ferroelectric(FM/FE)multiferroic heterostructure with magneto-elastic coupling.Finally,we consider future developmental trends in the electric-field manipulation of magnetic skyrmions and other topological magnetic domain structures.展开更多
基金financially supported by the National Natural Science Foundation of China(No.52071233)。
文摘The magnetic and electronic transport properties manipulated by spin-orbit torque have been devoted much attention as they show a great promise for future spintronic devices.Here,the spin dependent transport properties of the facing-target sputtered Pt/Mn_(4)N bilayers on MgO(001)substrates have been investigated systematically.The Hall resistivity of Pt/Mn_(4)N bilayers is strongly dependent on temperature,applied current intensity,Mn_(4)N and Pt layer thicknesses.The temperature-dependent sign reversal of anomalous Hall resistivity appears in Pt/Mn_(4)N bilayers,which is dominated by the competition between the magnetic proximity and spin Hall effects.Besides,the magnitude of anomalous Hall resistivity can be manipulated by applied current density.The critical and saturation currents are related to Mn_(4)N and Pt layer thicknesses.Furthermore,a Dzyaloshinskii-Moriya interaction coefficient(D)of 5.63 mJ·m^(-2)is calculated in Pt/Mn_(4)N/MgO systems.The details of the anomalous Hall effects in Pt/Mn_(4)N bilayers are helpful to understand the interfacial effects between heavy metals and ferrimagnets.
基金financially supported by the National Key Research and Development Program of China(No.2020YFA0309300)the Natural Science Foundation of Guangdong Province(No.2016A030308019)+1 种基金the National Natural Science Foundation of China(Nos.51901081 and 51871161)the Science and Technology Program of Guangzhou(Nos.2019050001 and 202002030052)
文摘Magnetic skyrmions are vortex-like swirling spin textures that are promising candidates for carrying information bits in future magnetic memories or logic circuits.To build skyrmionic devices,researchers must electrically manipulate magnetic skyrmions to enable easy integration into modern semiconductor technology.This operation generally uses a spin-polarized current,which unavoidably causes high energy dissipation and Joule heating.Thus,the electric-field strategy is a hopeful alternative for electrically manipulating the skyrmions due to the strategy’s negligible Joule heating and low energy cost.In this review,we systematically summarize the theoretical and experimental development of the electricalfield manipulation of magnetic skyrmions over the past decade.We review the following magnetic systems and physical mechanisms:(ⅰ)ultra-thin multilayer films with accumulation and release of interfacial charge,(ⅱ)singlephase multiferroic material with magneto-electric coupling,(ⅲ)ferromagnetic/ferroelectric(FM/FE)multiferroic heterostructure with magneto-elastic coupling.Finally,we consider future developmental trends in the electric-field manipulation of magnetic skyrmions and other topological magnetic domain structures.
基金financial support from the National Key R&D Program of China(2018YFB0407602,and 2020YFA0309300)National Natural Science Foundation of China(61627813,61871008,62001019,12004024,and 51901081)+5 种基金Beijing Natural Science Foundation(4202043)Beijing Nova Program from Beijing Municipal Science and Technology Commission(Z201100006820042)National Natural Science Foundation of China-German Research Foundation(52061135105)Outstanding Research Project of Shen Yuan Honors College,BUAA(230121102)the Science and Technology Program of Guangzhou(202002030052)Joint Research Key Fund for Guangzhou and Shen Zhen(2021B1515120047)。
