A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the ...A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.展开更多
A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field...A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ＋ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.展开更多
A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the b...A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.展开更多
基金supported by the Guangxi Provincial Natural Science Foundation,China(Grant No.2010GXNSFB013054)the Guangxi Provincial Key Science and Technology Program,China(Grant No.11107001-20)
文摘A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.
基金Project supported by the Guangxi Natural Science Foundation,China(No.2010GXNSFB013054)the Guangxi Key Science and Technology Program,China(No.1 1107001-20).
文摘A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ＋ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.
基金supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054)the Guangxi Key Science and Technology Program ofChina(No.11107001-20)
文摘A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.
