Zero and controllable thermal expansion in HfMgMo(3-x)WxO(12)

HfMgMo（3-x）WxO（12） with x = 0.5, 1.0, 1.5, 2.0, and 2.5 are developed with a simple solid state method. With increasing the content of W, solid solutions of Hf Mg Mo3-xWx O12 crystallize in an orthorhombic structure for x≤2.0 and a monoclinic structure for x2.0. A near-zero thermal expansion（ZTE） is realized for HfMgMo（2.5）W（0.5）O（12） and negative coefficients of thermal expansion（NCTE） are achieved for other compositions with different values. The ZTE and variation of NCTE are attributed to the difference in electronegativity between W and Mo and incorporation of a different amount of W, which cause variable distortion of the octahedra and softening of the MoO4 tetrahedra, and hence an enhanced NCTE in the a- and c-axis and reduced CTE in the b-axis as revealed by Raman spectroscopy and x-ray diffraction.

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO_3 stacked layer

The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R（T）–R0I^2 R（T） plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.