The 8×10 GHz Receiver Optical Subassembly Based on Silica Hybrid Integration Technology for Data Center Interconnection

An 8×10 GHz receiver optical sub-assembly （ROSA） consisting of an 8-channel arrayed waveguide grating （AWG） and an 8-channel PIN photodetector （PD） array is designed and fabricated based on silica hybrid integration technology. Multimode output waveguides in the silica AWG with 2% refractive index difference are used to obtain fiat-top spectra. The output waveguide facet is polished to 45° bevel to change the light propagation direction into the mesa-type PIN PD, which simplifies the packaging process. The experimentM results show that the single channel I dB bandwidth of AWG ranges from 2.12nm to 3.06nm, the ROSA responsivity ranges from 0.097 A/W to 0.158A/W, and the 3dB bandwidth is up to 11 GHz. It is promising to be applied in the eight-lane WDM transmission system in data center interconnection.

Design and fabrication of optical power splitters with large port count

We design and fabricate compact, low loss, and high port-count optical power splitters of 1 × 128 and 2 × 128 using silica-based planar lightwave circuit （PLC） technology on 6 inch quartz substrate. PLC technology is mainly based on plasma enhanced chemical vapor deposition, photolithography, and etching. The measured results show that the insertion loss, uniformity, and wavelength-dependent loss of 1 ~ 128 and 2 x 128 optical power splitters are less than 23, 1.43, and 0.92 dB and 23.3, 1.8, and 1.3 dB, respectively, in the wavelength range from 1.26 to 1.65/ma. The polarization-dependent losses are less than 0.16 and 0.2 dB, respectively, in the wavelengths of 1.31, 1.49, and 1.55 l/in.

Monolithic integration of a silica-based 16-channel VMUX/VDMUX on quartz substrate

A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach-Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz substrate, which eliminates the process of depositing the undercladding layer and reduces the power consumption compared with a device fabricated on a silicon substrate. The insertion loss and crosstalk of the integrated device are -5 dB and less than -22 dB, respectively. The power consumption is only 110 mW at the attenuation of 20 dB per channel.

A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss

According to the plasma dispersion effect of silicon(Si),a silicon-on-insulator(SOI) based variable optical attenuator(VOA) with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW(0.67 V,113.9 mA),and due to the carrier absorption,the polarization dependent loss(PDL) is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.