期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
类施主效应调控与高择优取向织构提升n型Bi_(2)(Te,Se)_(3)材料热电性能
1
作者 李奕辰 白树林 +13 位作者 文熠 赵哲 王磊 刘世博 郑俊卿 王斯琦 刘姗 高德政 刘东锐 朱英才 曹茜 高翔 谢鸿耀 赵立东 《Science Bulletin》 SCIE EI CAS CSCD 2024年第11期1728-1737,共10页
Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi_(2)Te_(3) stand out because of its excellent thermoelectric performance and... Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi_(2)Te_(3) stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi_(2)Te_(3) has seriously hindered the development of Bi_(2)Te_(3)-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi_(2)Te_(3) polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi_(2)Te_(2.7)Se_(0.3), and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZT_(ave) of 1.22 across the temperature range of 300–425 K are obtained. The thermoelectric generator(TEG, 7-pair) and thermoelectric cooling(TEC, 127-pair) modules were fabricated with our n-type textured Cu_(0.01)Bi_(2)Te_(2.7)Se_(0.3) coupled with commercial p-type Bi_(2)Te_(3). The TEC module demonstrates superior cooling efficiency compared with the commercial Bi_(2)Te_(3) device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi_(2)Te_(3)-based TEG modules. 展开更多
关键词 Bi_(2)Te_(3) Texture engineering TEC TEG Donor-like effect
原文传递
(Bi,Sb)_(2)Te_(3)/SiC纳米复合材料的热电性能增强:纳米SiC的尺寸和组分调控的影响
2
作者 蔡博文 裴俊 +6 位作者 董金峰 庄华鹭 顾津宇 曹茜 胡海华 林子皓 李敬锋 《Science China Materials》 SCIE EI CAS CSCD 2021年第10期2551-2562,共12页
纳米复合是增强材料热电性能的有效手段,特别是纳米SiC粉末常被用来制备基于Bi_(2)Te_(3)的纳米复合材料,但是纳米粒子的尺寸对热电性能的影响并不清楚.本文中,我们制备了一系列不同粒度的纳米SiC弥散于BiSbTe基体的复合材料,并系统研... 纳米复合是增强材料热电性能的有效手段,特别是纳米SiC粉末常被用来制备基于Bi_(2)Te_(3)的纳米复合材料,但是纳米粒子的尺寸对热电性能的影响并不清楚.本文中,我们制备了一系列不同粒度的纳米SiC弥散于BiSbTe基体的复合材料,并系统研究了其热电性能,发现纳米粒子的尺寸对BiSbTe材料电学性能有显著影响.小尺寸的纳米SiC复合会产生更高的电导率,纳米SiC的复合会增强材料的Seebeck系数,但这一增强与SiC的尺寸并无显著关联;另外,小尺寸的纳米SiC能够在一定程度上散射声子,而较大尺寸的纳米SiC却会使热导率增加,当纳米SiC尺寸为30 nm时,复合材料的ZT值达到了1.12,相比基体材料(ZT值为0.95)提高了18%.之后,通过优化基体组分、液相助烧以及优化烧结条件,材料的ZT值进一步提升到了1.33.本文证明,在BiSbTe材料中弥散分布小尺寸的纳米SiC能更有效地增强热电性能.此外,组分调控以及处理工艺的优化对于高性能的(Bi,Sb)_(2)Te_(3)/SiC纳米复合材料的获得必不可少. 展开更多
关键词 thermoelectric materials bismuth telluride effect of SiC nanoparticle size compositional and processing optimization
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部