We theoretically study the near-field couplings of two stacked all-dielectric nanodisks,where each disk has an electric anapole mode consisting of an electric dipole mode and an electric toroidal dipole(ETD)mode.Stron...We theoretically study the near-field couplings of two stacked all-dielectric nanodisks,where each disk has an electric anapole mode consisting of an electric dipole mode and an electric toroidal dipole(ETD)mode.Strong bonding and anti-bonding hybridizations of the ETD modes of the two disks occur.The bonding hybridized ETD can interfere with the dimer’s electric dipole mode and induce a new electric anapole mode.The anti-bonding hybridization of the ETD modes can induce a magnetic toroidal dipole(MTD)response in the disk dimer.The MTD and magnetic dipole resonances of the dimer form a magnetic anapole mode.Thus,two dips associated with the hybridized modes appear on the scattering spectrum of the dimer.Furthermore,the MTD mode is also accompanied by an electric toroidal quadrupole mode.The hybridizations of the ETD and the induced higher-order modes can be adjusted by varying the geometries of the disks.The strong anapole mode couplings and the corresponding rich higher-order mode responses in simple all-dielectric nanostructures can provide new opportunities for nanoscale optical manipulations.展开更多
This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and t...This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and the interface type. Here, we adopt the filament type to study the metal oxide based resistive switch- ing memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect （ECM） and valence change memory effect （VCM）. At the light of the influence of the electrode materials and switching layers on the RS char- acteristics, an overview has also been given on the performance parameters including the uniformity, endurance, the retention, and the multi-layer storage. Especially, we mentioned ITO （indium tin oxide） electrode and discussed the novel RS characteristics related with ITO. Finally, the challenges resistive random access memory （RRAM） device is facing, as well as the future development trend, are expressed.展开更多
Metal halide perovskite nanowires(PNWs)have attrac-ted great attention not only because they have some advant-ages,such as long carrier diffusion length,high absorption coefficient,and low defect state density,etc.[1−...Metal halide perovskite nanowires(PNWs)have attrac-ted great attention not only because they have some advant-ages,such as long carrier diffusion length,high absorption coefficient,and low defect state density,etc.[1−3],but also be-cause the nanowires perform efficient charge carrier transport-ing and possess large surface-to-volume ratio,driving PNWs to be applied in solar cells[4,5],lasers[6],and photodetectors(PDs)[7,8].Up to now,the high-performance PNW devices are all based on single nanowire or nanowire arrays[7,8].The com-plexity of the preparation process,the poor reproducibility and the high cost block the large-area fabrication and commer-cial application.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11704416 and 11704107)the Hunan Provincial Natural Science Foundation of China(Grant No.2021JJ20076)the Hubei Provincial Natural Science Foundation of China(Grant No.2020CFB557)。
文摘We theoretically study the near-field couplings of two stacked all-dielectric nanodisks,where each disk has an electric anapole mode consisting of an electric dipole mode and an electric toroidal dipole(ETD)mode.Strong bonding and anti-bonding hybridizations of the ETD modes of the two disks occur.The bonding hybridized ETD can interfere with the dimer’s electric dipole mode and induce a new electric anapole mode.The anti-bonding hybridization of the ETD modes can induce a magnetic toroidal dipole(MTD)response in the disk dimer.The MTD and magnetic dipole resonances of the dimer form a magnetic anapole mode.Thus,two dips associated with the hybridized modes appear on the scattering spectrum of the dimer.Furthermore,the MTD mode is also accompanied by an electric toroidal quadrupole mode.The hybridizations of the ETD and the induced higher-order modes can be adjusted by varying the geometries of the disks.The strong anapole mode couplings and the corresponding rich higher-order mode responses in simple all-dielectric nanostructures can provide new opportunities for nanoscale optical manipulations.
基金financial support from the National Natural Science Foundation of China(Nos.61474039 and 51572002)the Nature Science Foundation(Key Project) of Hubei Province (No.2015CFA052)
文摘This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and the interface type. Here, we adopt the filament type to study the metal oxide based resistive switch- ing memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect （ECM） and valence change memory effect （VCM）. At the light of the influence of the electrode materials and switching layers on the RS char- acteristics, an overview has also been given on the performance parameters including the uniformity, endurance, the retention, and the multi-layer storage. Especially, we mentioned ITO （indium tin oxide） electrode and discussed the novel RS characteristics related with ITO. Finally, the challenges resistive random access memory （RRAM） device is facing, as well as the future development trend, are expressed.
基金This work was supported by the National Natural Science Foundation of China(11874143,51972101)the Natural Science Foundation of Hubei Province(2019CFB508)+1 种基金L.Ding thanks the National Key Research and Development Pro-gram of China(2017YFA0206600)the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support.
文摘Metal halide perovskite nanowires(PNWs)have attrac-ted great attention not only because they have some advant-ages,such as long carrier diffusion length,high absorption coefficient,and low defect state density,etc.[1−3],but also be-cause the nanowires perform efficient charge carrier transport-ing and possess large surface-to-volume ratio,driving PNWs to be applied in solar cells[4,5],lasers[6],and photodetectors(PDs)[7,8].Up to now,the high-performance PNW devices are all based on single nanowire or nanowire arrays[7,8].The com-plexity of the preparation process,the poor reproducibility and the high cost block the large-area fabrication and commer-cial application.
