High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied...High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.展开更多
C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphir...C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30~ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.展开更多
This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagn...This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism （0.16 μB/Co2＋） in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism （0.65 μB/Co2＋） at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.展开更多
序言荷兰总共收藏有三幅《清明上河图》,一幅在阿姆斯特丹国家博物馆(Rijksmuseum),两幅在莱顿民族学博物馆(Museum voor Volkenkunde,图1、2)。国家博物馆收藏的画作没有被出版,也没有图片,目前无法讨论其内容和收藏历史。民族学博物...序言荷兰总共收藏有三幅《清明上河图》,一幅在阿姆斯特丹国家博物馆(Rijksmuseum),两幅在莱顿民族学博物馆(Museum voor Volkenkunde,图1、2)。国家博物馆收藏的画作没有被出版,也没有图片,目前无法讨论其内容和收藏历史。民族学博物馆收藏的两幅画没有被研究过,但是在博物馆网站有简短介绍和图片。所以,本文首先对这两幅《清明上河图》作初步研究,将来有机会再对阿姆斯特丹国家博物馆收藏的《清明上河图》做进一步考察和研究。展开更多
Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy ...Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy eigenvalues of bound 1sns(~1S^e)(n=1-6)states and the resonance parameters i.e.positions and widths of^lS^e states due to 2sns(n=2-5)and 2pnp(n=2-5)configurations of confined helium below N=2 ionization threshold of He^+have been estimated.The two-parameter(Depth and Width)finite oscillator potential is used to represent the confining potential due to the quantum dot.It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size.It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters.A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here.展开更多
Precise energy eigenvalues of metastable bound doubly excited 1,3Fe states originating from 2 pnf(n=4–6)configuration of helium-like ions(Z=2–4)under weakly coupled plasma(WCP)environment have been estimated within ...Precise energy eigenvalues of metastable bound doubly excited 1,3Fe states originating from 2 pnf(n=4–6)configuration of helium-like ions(Z=2–4)under weakly coupled plasma(WCP)environment have been estimated within the framework of Ritz variational method.The wavefunction is expanded in explicitly correlated Hylleraas type basis set.The screened Coulomb potential is consideredas mimic the WCP environment.The atomic systems tend towards gradual instability and the number of excited metastable bound states reduces with increasing plasma strength.The wavelengths corresponding to 2 pnf(1,3F^e)→2 pnf(1,3Do)(n=4–6;n′=3–6)transitions occurring between doubly excited states of plasma embedded two-electron ions are also reported.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 10804017, the Natural Science Foundation of Jiangsu Province under Grant No BK2007118, Research Fund for the Doctoral Program of Higher Education of China under Grant No 20070286037, Cyanine-Project Foundation of Jiangsu Province under Grant No 1107020060, Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province under Grant No 1107020070, and New Century Excellent Talents in University （NCET-05-0452）.
文摘High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.
基金partially supported by the National Natural Science Foundation of China (Grant No. 10804017)the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2007118)+3 种基金the Research Fund for the Doctoral Program of Higher Educa-tion of China (Grant No. 20070286037)the Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060)the Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070)the New Century Excellent Talents in University (Grant No. NCET-05-0452)
文摘C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30~ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.
基金Project partially supported by National Science Foundation of China (Grant No. 10804017)National Science Foundation of Jiangsu Province of China (Grant No. BK2007118)+3 种基金Research Fund for the Doctoral Program of Higher Education of China(Grant No. 20070286037)Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060)Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070)New Century Excellent Talents in University (NCET-05-0452)
文摘This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism （0.16 μB/Co2＋） in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism （0.65 μB/Co2＋） at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.
文摘序言荷兰总共收藏有三幅《清明上河图》,一幅在阿姆斯特丹国家博物馆(Rijksmuseum),两幅在莱顿民族学博物馆(Museum voor Volkenkunde,图1、2)。国家博物馆收藏的画作没有被出版,也没有图片,目前无法讨论其内容和收藏历史。民族学博物馆收藏的两幅画没有被研究过,但是在博物馆网站有简短介绍和图片。所以,本文首先对这两幅《清明上河图》作初步研究,将来有机会再对阿姆斯特丹国家博物馆收藏的《清明上河图》做进一步考察和研究。
基金Financial Support under Grant No.37(3)/14/27/2014-BRNS from the Department of Atomic Energy,BRNS,Government of IndiaFinancial Support under Grant No.PSW-160/14-15(ERO)from University Grants Commission,Government of India
文摘Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method.To be specific,precise energy eigenvalues of bound 1sns(~1S^e)(n=1-6)states and the resonance parameters i.e.positions and widths of^lS^e states due to 2sns(n=2-5)and 2pnp(n=2-5)configurations of confined helium below N=2 ionization threshold of He^+have been estimated.The two-parameter(Depth and Width)finite oscillator potential is used to represent the confining potential due to the quantum dot.It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size.It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters.A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here.
基金Supported under Grant No. EMR/2017/000737 from DST-SERB, Govt. of India, Grant No. 23(Sanc.)/ST/P/S&T/16G-35/2017 from DHESTB, Govt. of West Bengal, Indiaby the DHESTB,Govt.of West Bengal,India under Grant No.249(Sanc.)/ST/P/S&T/16G-26/2017
文摘Precise energy eigenvalues of metastable bound doubly excited 1,3Fe states originating from 2 pnf(n=4–6)configuration of helium-like ions(Z=2–4)under weakly coupled plasma(WCP)environment have been estimated within the framework of Ritz variational method.The wavefunction is expanded in explicitly correlated Hylleraas type basis set.The screened Coulomb potential is consideredas mimic the WCP environment.The atomic systems tend towards gradual instability and the number of excited metastable bound states reduces with increasing plasma strength.The wavelengths corresponding to 2 pnf(1,3F^e)→2 pnf(1,3Do)(n=4–6;n′=3–6)transitions occurring between doubly excited states of plasma embedded two-electron ions are also reported.
