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Optimal design scheme based on the segmental transmission line methodology for high-frequency interconnection in 3D micro/nano integration
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作者 Chenye Li Zhensong Li Min Miao 《Nanotechnology and Precision Engineering》 EI CAS CSCD 2020年第3期174-186,共13页
With the continuous growth of signal frequency and package density, discontinuity of the high-frequency interconnection in 3 D micro/nano integration becomes unavoidable, which results in serious signal integrity prob... With the continuous growth of signal frequency and package density, discontinuity of the high-frequency interconnection in 3 D micro/nano integration becomes unavoidable, which results in serious signal integrity problems. Traditional interconnection design schemes, such as termination and shielding/isolation, cannot meet the requirements under the unified constraints of specific cost, space occupancy, and performance. In this study, a transmission line design optimization scheme based on the segmental transmission line(STL) methodology is proposed. The genetic algorithm is used to select the optimal segment structure parameters of the transmission line to construct an STL with satisfying transmission performance or meet the specific signal amplitude adjustment requirements. This scheme can be adapted to various signal transmission scenarios to significantly improve the signal loss caused by reflection or other negative electromagnetic factors and meet the requirements for the modeling of discontinuous transmission lines. The simulation results show that this scheme is effective in the design scenario of performance improvement or equivalent modeling of discontinuous transmission lines and has significant advantages in circuit area reduction. 展开更多
关键词 Discontinuous transmission line Segmental transmission line Genetic algorithm Equivalent model
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Electrical characterization of integrated passive devices using thin film technology for 3D integration
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作者 Xin SUN Yun-hui ZHU +5 位作者 Zhen-hua LIU Qing-hu CUI Sheng-lin MA Jing CHEN Min MIAO Yu-feng JIN 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2013年第4期235-243,共9页
With the development of 3D integration technology, microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs), i... With the development of 3D integration technology, microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs), including inductors, capacitors, and resistors, could dramatically save the tbotprint of the system, optimize the form factor, and improve the performance of radio frequency (RF) systems. In this paper, IPDs using thin film built-up technology are introduced, and the design and characterization of coplanar waveguides (CPWs), inductors, and capacitors are presented. 展开更多
关键词 Integrated passive device (IPD) Benzocyclobutcne (BCB) Thin flim 3D Integration
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