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First-principles investigation of the significant anisotropy and ultrahigh thermoelectric efficiency of a novel two-dimensional Ga_(2)I_(2)S_(2) at room temperature 被引量:1
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作者 Zheng Chang Ke Liu +8 位作者 Zhehao Sun Kunpeng Yuan Shuwen Cheng Yufei Gao Xiaoliang Zhang Chen Shen Hongbin Zhang Ning Wang Dawei Tang 《International Journal of Extreme Manufacturing》 SCIE EI 2022年第2期100-112,共13页
Two-dimensional(2D)thermoelectric(TE)materials have been widely developed;however,some 2D materials exhibit isotropic phonon,electron transport properties,and poor TE performance,which limit their application scope.Th... Two-dimensional(2D)thermoelectric(TE)materials have been widely developed;however,some 2D materials exhibit isotropic phonon,electron transport properties,and poor TE performance,which limit their application scope.Thus,exploring excellent anisotropic and ultrahigh-performance TE materials are very warranted.Herein,we first investigate the phonon thermal and TE properties of a novel 2D-connectivity ternary compound named Ga2I2S2.This paper comprehensively studies the phonon dispersion,phonon anharmonicity,lattice thermal conductivity,electronic structure,carrier mobility,Seebeck coefficient,electrical conductivity,and the dimensionless figure of merit(ZT)versus carrier concentration for 2D Ga_(2)I_(2)S_(2).We conclude that the in-plane lattice thermal conductivities of Ga_(2)I_(2)S_(2) at room temperature(300 K)are found to be 1.55 W mK^(−1) in the X-axis direction(xx-direction)and 3.82 W mK^(−1)in the Y-axis direction(yy-direction),which means its anisotropy ratio reaches 1.46.Simultaneously,the TE performance of p-type and n-type doping 2D Ga2I2S2 also shows significant anisotropy,giving rise to the ZT peak values of p-type doping in xx-and yy-directions being 0.81 and 1.99,respectively,and those of n-type doping reach ultrahigh values of 7.12 and 2.89 at 300 K,which are obviously higher than the reported values for p-type and n-type doping ternary compound Sn2BiX(ZT∼1.70 and∼2.45 at 300 K)(2020 Nano Energy 67104283).This work demonstrates that 2D Ga_(2)I_(2)S_(2) has high anisotropic TE conversion efficiency and can also be used as a new potential room-temperature TE material. 展开更多
关键词 THERMOELECTRICITY strong anisotropy two-dimensional materials room temperature first-principles calculation
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Enhanced mechanical property and tunable dielectric property of SiC_(f)/SiC-SiBCN composites by CVI combined with PIP 被引量:5
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作者 Chaokun SONG Yongsheng LIU +3 位作者 Fang YE Laifei CHENG Pengfei ZHANG Nan CHAI 《Journal of Advanced Ceramics》 SCIE CAS CSCD 2021年第4期758-767,共10页
The SiBCN matrix via chemical vapor infiltration(CVI)or/and polymer infiltration pyrolysis(PIP)technologies was orderly introduced to SiC_(f)/SiC composites to optimize the mechanical property and electromagnetic(EM)s... The SiBCN matrix via chemical vapor infiltration(CVI)or/and polymer infiltration pyrolysis(PIP)technologies was orderly introduced to SiC_(f)/SiC composites to optimize the mechanical property and electromagnetic(EM)shielding effectiveness simultaneously.The BN interface with the thickness of 350 nm was designed to obtain a little stronger interface bonding.The flexural strength of SiC_(f)/SiC-SiBCN composites reached 545.45±29.59 MPa thanks to the crack deflection between the CVI SiC and CVI SiBCN,as well as CVI SiBCN and PIP SiBCN matrix because of the modulus difference between them.The fracture toughness(KiC)with the value of 16.02±0.94 MPa·m^(1/2) was obtained owing to the extension of crack propagation path.The adverse effect of stronger interface bonding was eliminated by the design of matrix microstructure for SiC_(f)/SiC-SiBCN composites.The thermal conductivity in the thickness direction was 7.64 W·(m·K)^(-1) at 1200℃and the electric resistivity decreased to 1.53×10^(3) Ω·m.The tunable dielectric property was obtained with the coordination of wave-absorption CVI SiBCN matrix and impedance matching PIP SiBCN matrix,and the total shielding effectiveness(SE_(T))attained 30.01 dB.It indicates that the SiC_(f)/SiC-SiBCN composites have great potential to be applied as structural and functional materials. 展开更多
关键词 SiC_(f)/SiC-SiBCN composites chemical vapor infiltration(CVI) polymer infiltration pyrolysis(PIP) mechanical property electromagnetic characteristic
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Single-source-precursor synthesis of porous W-containing SiC-based nanocomposites as hydrogen evolution reaction electrocatalysts 被引量:1
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作者 Zhaoju YU Kangwei MAO Yao FENG 《Journal of Advanced Ceramics》 SCIE CAS CSCD 2021年第6期1338-1349,共12页
In this paper,W-containing SiC-based ceramic nanocomposites were successfully prepared by a polymer-derived ceramic approach using allylhydridopolycarbosilane(AHPCS)as a SiC source,WC16 as a tungsten source,polystyren... In this paper,W-containing SiC-based ceramic nanocomposites were successfully prepared by a polymer-derived ceramic approach using allylhydridopolycarbosilane(AHPCS)as a SiC source,WC16 as a tungsten source,polystyrene(PS)as a pore forming agent as well as divinyl benzene(DVB)as a carbon rich source.High-temperature phase behavior of the W-containing SiC-based ceramics after heat treatment was studied,showing that excessive DVB content in the feed will inhibit the crystallinity of W-containing nanoparticles in the final ceramic nanocomposites.The high specific surface area(SSA)of 169.4-276.9 m^(2)/g can be maintained even at high temperature in the range of 1400-1500℃,due to the carbothermal reaction which usually occurs between 1300 and 1400℃.All prepared W-containing SiC-based nanocomposites reveal electrocatalytic activity for the hydrogen evolution reaction(HER).In detail,compared with reversible hydrogen electrode(RHE),the ceramic sample PWA-2-1300 after heat treatment at 1300℃ has the smallest overpotential of 286 mV when the current density is 10 mA·cm^(-2) in acid medium,indicating the promising perspective in the water splitting field. 展开更多
关键词 single-source-precursor W-containing phase SiC-based nanocomposites electrocatalyst hydrogen evolution reaction
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