Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst.We use high resolution photoiuminescence spectroscopy to gain the optical properties of these nan...Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst.We use high resolution photoiuminescence spectroscopy to gain the optical properties of these nanorods in large scale.The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300μeV,and the ratio of ultraviolet/yellow luminescence larger than 100.Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid grovth mechanism.The bottom of the nanorod has a 3.31-eV luminescence,which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.展开更多
基金Supported by the China Scholarship Council(CSC)under No 20073020the National Natural Science Foundations of China(Nos 50902113,50902114)+1 种基金the National Basic Research Program of China(No 2011CB610406)the 111 Project of China(No B08040).
文摘Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst.We use high resolution photoiuminescence spectroscopy to gain the optical properties of these nanorods in large scale.The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300μeV,and the ratio of ultraviolet/yellow luminescence larger than 100.Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid grovth mechanism.The bottom of the nanorod has a 3.31-eV luminescence,which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.
