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新型铱配合物的合成及电致发光性质研究 被引量:5
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作者 李春香 卜清明 +2 位作者 孙培培 潘毅 TAo Ye 《无机化学学报》 SCIE CAS CSCD 北大核心 2006年第8期1479-1483,共5页
合成了一种新型橙红色磷光材料铱的配合物(npp)2Ir(acac)(npp=2-(1-萘基)-4-苯基吡啶,acac=乙酰丙酮),通过1HNMR、MS、元素分析对其结构进行了表征。以铱配合物(npp)2Ir(acac)作为发光体,制备了结构为ITO/Ir(5%):PVK(60nm)/F-TBB(15nm)/... 合成了一种新型橙红色磷光材料铱的配合物(npp)2Ir(acac)(npp=2-(1-萘基)-4-苯基吡啶,acac=乙酰丙酮),通过1HNMR、MS、元素分析对其结构进行了表征。以铱配合物(npp)2Ir(acac)作为发光体,制备了结构为ITO/Ir(5%):PVK(60nm)/F-TBB(15nm)/Alq3(15nm)/LiF(1nm)/Al(150nm)的电致发光器件,研究了其电致发光性质。结果表明器件的最大发射波长在599nm,最大发光亮度为3841cd·m-2,最大电流效率达3.9cd·A-1。 展开更多
关键词 铱配合物 有机电致发光 磷光 三线态
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Quantum Well Infrared Photodetectors:the Basic Design and New Research Directions 被引量:10
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作者 H.C.Liu 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第5期529-537,共9页
The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These incl... The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These include monolithic integration of QWIPs with GaAs based electronic and optoelectronic devices,high frequency and high speed QWIPs and applications,multicolor and multispectral detectors,and p-type QWIPs. 展开更多
关键词 光电探测器 量子束 红外探测器
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Terahertz Semiconductor Quantum Well Devices 被引量:2
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作者 Liu H C Luo H +10 位作者 Ban D Waichter M Song C Y Wasilewski Z R Buchanan M Aers G C SpringThorpe A J Cao J C Feng S L Williams B S Hu Q 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期627-634,共8页
For eventually providing terahertz science with compact and convenient devices,terahertz (1~10THz) quantum-well photodetectors and quantum-cascade lasers are investigated.The design and projected detector performance... For eventually providing terahertz science with compact and convenient devices,terahertz (1~10THz) quantum-well photodetectors and quantum-cascade lasers are investigated.The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons.Background limited infrared performance (BLIP) operations are observed for all samples (three in total),designed for different wavelengths.BLIP temperatures of 17,13,and 12K are achieved for peak detection frequencies of 9.7THz(31μm),5.4THz(56μm),and 3.2THz(93μm),respectively.A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied.The δ-doping density for each period varies from 3.2×1010 to 4.8×1010cm-2.We observe that the lasing threshold current density increases monotonically with doping concentration.Moreover,the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically.Interestingly the observed maximum lasing temperature is best at a doping density of 3.6×1010cm-2. 展开更多
关键词 半导体 量子论 激光技术 光电探测器
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Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers 被引量:1
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作者 Y.Hou J.R.Liu +6 位作者 M.Buchanan A.J.Spring Thorpe P.J.Poole H.C.Liu Ke Wu Sjoerd Roorda X.P.Zhang 《Nano-Micro Letters》 SCIE EI CAS 2012年第1期10-13,共4页
We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabri... We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source. 展开更多
关键词 Proton implanted In Ga As Trahertz Photomixer Multi-wavelength quantum dot laser Fourier transform infrared spectroscopy
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Numerical simulation of a gradient-index fibre probe and its properties of light propagation
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作者 王驰 毛幼馨 +3 位作者 唐智 方臣 于瀛洁 齐博 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期332-338,共7页
In order to verify the properties of the light propagating through a gradient-index (GRIN) fibre probe for optical coherence tomography (OCT), numerical simulation using the optical software GLAD is carried out. F... In order to verify the properties of the light propagating through a gradient-index (GRIN) fibre probe for optical coherence tomography (OCT), numerical simulation using the optical software GLAD is carried out. Firstly, the model of the GRIN fibre probe is presented, which is consisted of a single mode fibre (SMF), a no-core fibre (NCF), a GRIN fibre lens and an air path. Then, the software GLAD is adopted to numerically investigate how the lengths of the NCF and the GRIN fibre lens influence the performance of the Gaussian beam focusing through the GRIN fibre probe. The simulation results are well consistent with the experimental ones, showing that the GLAD based numerical simulation technique is an intuitive and effective tool for the verification of the properties of the light propagation. In this paper, we find that on the conditions of a constant GRIN fibre lens length of 0.1 mm and an NCF length of 0.36 mm, the working distance of the probe will be 0.75 mm and the focus spot size is 32 μm. 展开更多
关键词 optical coherence tomography gradient-index fibre probe gradient-index lens GLAD
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Using Dichroism to Elucidate the Nature of Magnetic Interactions in Antiferromagnetic Materials
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作者 K R Hoffman D J Lockwood 《发光学报》 EI CAS CSCD 北大核心 2008年第4期627-632,共6页
William(familiarly known as Bill by all his colleagues) Yen's life-long scientific interest in the magnetic properties of rutile structured antiferromagnetic materials(AFMs) began with his involvement in the disco... William(familiarly known as Bill by all his colleagues) Yen's life-long scientific interest in the magnetic properties of rutile structured antiferromagnetic materials(AFMs) began with his involvement in the discovery in 1965 of the magnon sidebands of MnF2 in optical absorption[1].A basic outline of this discovery is given elsewhere in this special issue of the Chinese Journal of Luminescence[2].A narrative discussion of events leading to this discovery appears in a contribution written by Bill and Robert White for a special edition of Low Temperature Physics on Antiferromagnetism[3].A quote from that remembrance highlights a quality that remained with Bill throughout his career: "The identification of these sidebands by a pair of young students and two post-docs illustrates how serendipity,a touch of good luck and reckless youthful enthusiasm often plays a role in scientific discovery".Bill's forever youthful enthusiasm coupled with creative insights into current research questions led to numerous pioneering discoveries throughout his career.This paper reviews Bill's contributions to developing techniques to exploit dichroism to study the magnetic properties of AFMs.Bill's publications in this area span more than 30 years,from 1971 to 2004. 展开更多
关键词 二向色性 磁振子 交互作用 反铁磁性
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In_(1-x)Al_xSb外延层的E_1和E_1+Δ_1的光调制反射光谱研究
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作者 徐尧洲 Y.Beaulieu J.B.Webb 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 1993年第4期315-318,共4页
首次用光调制反射光谱的实验测量方法,在~10K下对In_(1-x)Al_xSb(0≤x≤0.55)外延层的光跃迁E_1和E_1+△_1及其谱线展宽ω,进行实验测定。由测定结果,得到对E_1和E_1+△_1的弯曲参数分别为0.752eV和0.723eV。
关键词 外延层 反射光谱 Ⅲ-Ⅴ族合金
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WAVELENGTH PROBING OPTICAL COHERENCE TOMOGRAPHY
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作者 SHOUDE CHANG YOUXIN MAO 《Journal of Innovative Optical Health Sciences》 SCIE EI CAS 2011年第1期79-88,共10页
In swept-source optical coherence tomography(SSOCT),the swept-source stimulates system by a series of wavelengths in time sequence;a photo detector then collects all reflected/backscattered light from testing sample a... In swept-source optical coherence tomography(SSOCT),the swept-source stimulates system by a series of wavelengths in time sequence;a photo detector then collects all reflected/backscattered light from testing sample as the components of Fourier series.Due to the nature of the SSOCT,the processing in spectral domain can merge multiple swept-sources with different central wavelengths,which greatly increases the resolution of the OCT imaging.In the wavelength probing OCT,a standard broadband SSOCT system is used to extract the internal structure of the sample,and another narrow band light can be used to probe the spectral feature of the sample at the probing wavelength. 展开更多
关键词 Optical coherence tomography swept-source OCT spectral signal processing
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半导体材料深低温下的调制反射光谱研究
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作者 徐尧洲 Y.Beaulieu J.B.Webb 《上海建材学院学报》 CSCD 1993年第3期281-287,共7页
本文在深低温(约10 K)下,对生长在(001)Insb 基板上的 In_(1-x)Al_xSb 单外延层,用调制反射光谱方法,首次进行了 E_1和 E_1+Δ_1光跃迁的光反射测量。温度范围从8 K 到300 K,组分 x 范围从0到0.55的样品的光反射测量结果,经计算机处理后... 本文在深低温(约10 K)下,对生长在(001)Insb 基板上的 In_(1-x)Al_xSb 单外延层,用调制反射光谱方法,首次进行了 E_1和 E_1+Δ_1光跃迁的光反射测量。温度范围从8 K 到300 K,组分 x 范围从0到0.55的样品的光反射测量结果,经计算机处理后,用图示出 E_1和 E_1+Δ_1随 x 值变化的关系。 展开更多
关键词 外延层 调制反射光谱 半导体材料
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High contrast ratio,high uniformity multiple quantum well spatial light modulators
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作者 黄寓洋 刘惠春 +7 位作者 Wasilewski Z R Buchanan M Laframboise S R 杨晨 崔国新 边历峰 杨辉 张耀辉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期62-65,共4页
Our latest research results on GaAs-A1GaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is ... Our latest research results on GaAs-A1GaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR. 展开更多
关键词 spatial light modulator multiple quantum well UNIFORMITY contrast ratio adjust layer matching condition
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Indium bump array fabrication on small CMOS circuit for flip-chip bonding
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作者 黄寓洋 张宇翔 +5 位作者 殷志珍 崔国新 刘惠春 边历峰 杨辉 张耀辉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期148-151,共4页
We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/A1GaAs multiple quantum well spatial light modulator. A chip holder with a via hole is ... We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/A1GaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 - 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 - 6.5 mm^2 CMOS chip. 展开更多
关键词 flip-chip bonding indium bump ARRAY small-size
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Polarized Light Microscopy and Spectroscopy of Individual Single-Walled Carbon Nanotubes 被引量:2
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作者 Jacques Lefebvre Paul Finnie 《Nano Research》 SCIE EI CAS CSCD 2011年第8期788-794,共7页
极化的轻显微镜学(PLM ) 习惯于围单人赛的碳 nanotubes (SWNT ) 越过裂缝开始在空中推迟了的图象个人。成像对比依靠典型地代表 SWNT 的强壮的光 anisotropy。我们把 PLM 与悦耳的轻来源相结合启用 hyperspectral 刺激光谱学和 nanotub... 极化的轻显微镜学(PLM ) 习惯于围单人赛的碳 nanotubes (SWNT ) 越过裂缝开始在空中推迟了的图象个人。成像对比依靠典型地代表 SWNT 的强壮的光 anisotropy。我们把 PLM 与悦耳的轻来源相结合启用 hyperspectral 刺激光谱学和 nanotube chirality 赋值。有荧光显微镜学和光谱学的比较证实与 PLM 做的任务。这代表一条万用的新途径到成像 SWNT 和相关结构。 展开更多
关键词 单壁碳纳米管 偏光显微镜 激发光谱 光学各向异性 SWNTS 可调谐光源 荧光显微镜 PLM
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The Dynamics of the Nucleation, Growth and Termination of Single-Walled Carbon Nanotubes from in situ Raman Spectroscopy During Chemical Vapor Deposition 被引量:2
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作者 Paul Finnie Andrew Li-Pook-Than Jacques Lefebvre 《Nano Research》 SCIE EI CSCD 2009年第10期783-792,共10页
The dynamics of the chemical vapor deposition(CVD)of single-walled carbon nanotubes(SWNTs)is extracted experimentally using in situ Raman spectroscopy.Nanotubes are grown using a thinlm cobalt catalyst and an ethanol... The dynamics of the chemical vapor deposition(CVD)of single-walled carbon nanotubes(SWNTs)is extracted experimentally using in situ Raman spectroscopy.Nanotubes are grown using a thinlm cobalt catalyst and an ethanol precursor in a miniature hot walled reactor with optical access.Raman spectra at room temperature and at the growth temperature are compared for two growth temperatures.The evolution of the G-band,D-band,and radial breathing mode(RBM)is tracked at the growth temperature with time resolution of a few seconds.There are three identifiable phases in the evolution of the Raman signal intensity:an initial exponential increasing phase,a linear growth phase,and a saturation phase.In situ optical spectroscopy thus enables the study of nucleation,steady growth,and deactivation processes to be investigated separately in real time.The evolution curves for all bands(G,D,and RBM),when scaled,collapse onto the same curve,to within experimental uncertainty. 展开更多
关键词 Single-walled carbon nanotube chemical vapor deposition Raman spectroscopy NUCLEATION TERMINATION
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