Reformulation of Relativistic Quantum Mechanics Equations with Non-Commutative Sedeons

We present sixteen-component values “sedeons”, generating associative non-commutative space-time algebra. The generalized relativistic wave equations based on sedeonic wave function and space-time operators are proposed. We demonstrate that sedeonic second-order wave equation for massive field can be reformulated as the quasi-classical equation for the potentials of the field or in equivalent form as the Maxwell-like equations for the field intensities. The sedeonic first-order Dirac-like equations for massive and massless fields are also discussed.

Direct laser interference patterning of nonvolatile magnetic nanostructures in Fe60Al40 alloy via disorder‐induced ferromagnetism

Current magnetic memories are based on writing and reading out the domains with opposite orientation of the magnetization vector.Alternatively,information can be encoded in regions with a different value of the saturation magnetization.The latter approach can be realized in principle with chemical order-disorder transitions in intermetallic alloys.Here,we study such transformations in a thin-film(35 nm)Fe60Al40 alloy and demonstrate the formation of periodic magnetic nanostructures(PMNS)on its surface by direct laser interference patterning(DLIP).These PMNS are nonvolatile and detectable by magnetic force microscopy(MFM)at room temperature after DLIP with a single nanosecond pulse.We provide different arguments that the PMNS we observe originate from increasing magnetization in maxima of the interference pattern because of chemical disordering in the atomic lattice of the alloy at temperatures T higher than the critical temperature Tc for the order(B2)-disorder(A2)transition.Theoretically,our simulations of the temporal evolution of a partially ordered state at T>Tc reveal that the disordering rate is significant even below the melting threshold.Experimentally,we find that the PMNS are erasable with standard thermal annealing at T<Tc.

Sedeonic Equations of Gravitoelectromagnetism

In present paper we develop the description of massless fields on the basis of space-time algebra of sixteen-component sedeons. The generalized sedeonic second-order equation for unified gravito-electromagnetic (GE) field describing simultaneously weak gravity and electromagnetism is proposed. The relations for the GE field energy, momentum and Lorentz invariants are derived. The special case of GE field described by first-order sedeonic wave equation is also discussed.

New luminescent 10-oxybenzoquinolate complexes of rare earth metals

A series of Sc,Y,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Ho,Er,Tm and Yb complexes with oxybenzoquinoline ligands(BQ) was synthesized by the reactions of 10-hydroxybenzo[h]quinoline with cyclopentadienides or tris(trimethylsilyl)amides of rare earth metals.The structure,as well as the photo-and electroluminescent(PL,EL) properties of these complexes in solutions and solid state were studied.In solutions,complexes of sodium and lanthanides exhibit double peaked ligand-centered PL of enol and keto forms of BQ with a quantum yield of 1%-8%.In the solid state the complexes of Sm,Eu,Ho,Nd,Er,and Yb along with the ligand-centered PL also exhibit a moderate-intensity metal-centered PL which is characteristic of the corresponding Ln^(3+) ions.Sc(BQ)_(3) complex shows bright green EL which has intensity comparable to the best results observed for scandium complexes with other organic ligands.

Associative Space-Time Sedenions and Their Application in Relativistic Quantum Mechanics and Field Theory

We present an alternative sixteen-component hypercomplex scalar-vector values named “space-time sedenions”, generating associative noncommutative space-time Clifford algebra. The generalization of relativistic quantum mechanics and field theory equations based on sedenionic wave function and space-time operators is discussed.

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.

Monophthalocyanine complexes of samarium and terbium with axial ligands:synthesis, structure and optoelectronic properties

The monophthalocyanine complexes of samarium and terbium containing axial 2-mercaptobenzothiazole（Pc Sm（MBT）（1））, 2-（2-benzoxazol-2-yl） phenolate（Pc Tb（OON）（2）） or 2-（2-benzothiazol-2-yl）phenolate（Pc Tb（SON）（3）） ligands were synthesized and identified by elemental, LDI-TOF and X-ray（for 1） analysis.Photoluminescence（PL） and electroluminescence（EL） spectra of the compounds contained only emission bands of phthalocyanine and axial ligands but did not contain the bands of f-f transitions.It was found that among the complexes 1, 2, 3 the latter had highest photoconductivity（~10–7 S/cm） and photovoltaic properties.An organic photovoltaic device（OPV） of configuration of ITO/3/C60/Alq3/Al revealed open-circuit voltage（VOC） of 0.24 V and short current density（ISC） of 0.3 μA/cm2 under illumination by a xenon lamp at 17 m W/cm2.

Epitaxial thin-film Pd_(1-x)Fe_(x) alloy: a tunable ferromagnet for superconducting spintronics

Thin epitaxial films of the palladium-rich Pd_(1-x)Fe_(x) alloy were synthesized and extensively studied as a tunable ferromagnetic material for superconducting spintronics. The(001)-oriented Mg O single-crystal substrate and the composition range of x = 0.01–0.07 were chosen to support the epitaxial growth and provide the films with magnetic properties spanning from very soft ferromagnet for memory applications to intermediately soft and moderately hard for the programmable logic and circuit biasing, respectively. Dependences of the saturation magnetization, Curie temperature and three magnetic anisotropy constants on the iron content x were obtained for the first time from the analyses of the magnetometry and ferromagnetic resonance data. The experimental results were discussed based on existing theories of dilute ferromagnetic alloys. Simulation of the hysteresis loops within the Stoner-Wohlfarth model indicates the predominant coherent magnetic moment rotation at cryogenic temperatures. The obtained results were compiled in a database of magnetic properties of a palladium-iron alloy in a single-crystal thin-film form considered as a material for superconducting spintronics.

Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

Erbium-doped barium titanate(BaTiO_(3):Er)xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate(SrTiO_(3))xerogel film on Si substrate after annealing at 800°C or 900°C.The elaborated structures show room tempera-ture upconversion luminescence under 980 nm excitation with the photoluminescence(PL)bands at 523,546,658,800 and 830 nm corresponding to^(2)H1_(1/2)→^(4)I_(15/2),^(4)S_(3/2)→^(4)I_(15/2),^(4)F_(9/2)→^(4)I_(15/2)and^(4)I_(9/2)→^(4)I_(15/2)transitions of trivalent erbium.Raman and X-ray diffraction(XRD)analysis of BaTiO_(3):Er\porous SrTiO_(3)\Si structure showed the presence of perovskite phases.Its excellent up-conversion optical performance will greatly broaden its applications in perovskite solar cells and high-end anti-counterfeiting technologies.

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm^(−2) at T=8 and 77 K,respectively.To achieve such a low threshold power density,vicinal GaN substrates were used to reduce the edge-component threading dislocation(ETD)density of the InN film.Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps,and the ETD density can be reduced to approximately 5×10^(8) cm^(−2) near the surface of the 5-μm-thick film.The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film.As a result,the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.