The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the ...The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.展开更多
A method of magnetron sputtering followed by continuous-wave （cw） laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtere...A method of magnetron sputtering followed by continuous-wave （cw） laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064nm ew laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 1021 cm-3. The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an emcient way to obtain an intermediate band semiconductor material for solar cells.展开更多
基金Supported by the Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology under Grant No 2015H0010the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SICthe Natural Science Foundation of Fujian Province under Grant No 2016J01751
文摘The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.
基金Supported by the National Natural Science Foundation of China under Grant No 61076056the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SIC
文摘A method of magnetron sputtering followed by continuous-wave （cw） laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064nm ew laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 1021 cm-3. The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an emcient way to obtain an intermediate band semiconductor material for solar cells.
