In this paper AlGaInP light emitting diodes with different types of electrodes： Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results sh...In this paper AlGaInP light emitting diodes with different types of electrodes： Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide （ITO）, but also reduces the specific contact resistances between ITO and GaP, which are 1.273× 10^-6 Ω·cm^2 and 1.743× 10^-3 Ω·cm^2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.展开更多
GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional re...GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.展开更多
In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low he...In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation re-combination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15?angle cap.展开更多
This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the...This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively.展开更多
基金supported by the Natural Science Foundation of Beijing,China (Grant No.4092007)the National High Technology Research and Development Program of China (Grant No.2008AA03Z402)+1 种基金the Doctoral Program Foundation of Beijing,China(Grant No.X0002013200801)the Seventh BJUT Technology Fund for postgraduate students,China
文摘In this paper AlGaInP light emitting diodes with different types of electrodes： Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide （ITO）, but also reduces the specific contact resistances between ITO and GaP, which are 1.273× 10^-6 Ω·cm^2 and 1.743× 10^-3 Ω·cm^2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.
基金Supported by the National Natural Science Foundation of Beijing under Grant No 4002003, and the National Basic Research Programme of China under Grant No 2006CB604902.
文摘GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.
基金supported by Special Funds for Major State Basic Research Project of China(No.G20000683-02)the National Natural Science Foundation of China(Grant Nos.69889601,60276033,60077004)+2 种基金Chinese 863 Plan(No.2002AA312070)Beijing Natural Science Foundation(No.4002003)Beijing Education Committee Project(No.99270602).
文摘In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation re-combination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15?angle cap.
基金Project supported by the National High Technology Research and Development Program of China(No.SQ2008AA03Z402).
文摘This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes（LEDs） by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively.
