The interface defects at the Si/SiO<sub>2</sub> interface in ρ-type silicon （111） MOS structures have been studied by the DLTS method. A dominant defect H<sub>it</sub>,（0.503） at the Si/Si...The interface defects at the Si/SiO<sub>2</sub> interface in ρ-type silicon （111） MOS structures have been studied by the DLTS method. A dominant defect H<sub>it</sub>,（0.503） at the Si/SiO<sub>2</sub> interface has been found. Its characteristics are （i） the average hole ionization Gibbs free energy △G<sub>p</sub>≥0.503 eV; （ii） by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO<sub>2</sub> interface is less than △G<sub>p</sub> there is still the strong DLTS peak; （iii） its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and （iv） its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H<sub>it</sub>（0.503） level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO<sub>2</sub> in the Si/SiO<sub>2</sub> systems formed by thermal展开更多
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO<sub>2</sub> interface in ρ-type silicon （111） MOS structures have been studied by the DLTS method. A dominant defect H<sub>it</sub>,（0.503） at the Si/SiO<sub>2</sub> interface has been found. Its characteristics are （i） the average hole ionization Gibbs free energy △G<sub>p</sub>≥0.503 eV; （ii） by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO<sub>2</sub> interface is less than △G<sub>p</sub> there is still the strong DLTS peak; （iii） its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and （iv） its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H<sub>it</sub>（0.503） level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO<sub>2</sub> in the Si/SiO<sub>2</sub> systems formed by thermal
