Ionizing Dose Effect of Thermal Oxides Implanted with Si^＋ Ions

Total ionizing dose effects of Si^＋ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence （PL） method is engaged to investigate nanostructures of samples. Ar^＋ implanted samples are also studied by the same way to provide a comparison. The results show that Si^＋ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net posi- tive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar^＋ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si^＋ implantation shows little dependence on implant dose of Ar^＋ ions. This is explained by possible increase of recombination centres.

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

A three-dimensional finite element models for phase change random access memory （PCRAM） is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure （CS） and the ring-type contact in bottom electrode （RIB） are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in CST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current.

Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX

In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.

Design of a Modified Tracking Differentiator

A modified tracking differentiator is proposed. Firstly, a nonlinear odd exponent continuous function is adopted which is only stable at one equilibrium point and proved the global asymptotic stability of the modified tracking differentiator by select a Lyapunov function. Through combining of the nonlinear and linear function properly, it can be sure that the state converges to the equilibrium point with high speed automatically no matter that the state was far away from the equilibrium point or near to it, and it can prevent the chattering.?Simulation results show that the modified tracking differentiator tracking results?are?superior to the classical nonlinear tracking differentiator, and the response?of state variables tracking differentiator estimated?is?almost coincide with the real state of the variables of the given system.

Temperature-Dependent Raman Spectrum of Hexagonal YMnO3 Films Synthesized by Chemical Solution Method

We study the temperature-dependent Raman spectrum of hexagonal YMnO3 films prepared by a chemical solution method. There are seven Raman peaks （3A1 ＋ E1 ＋ 4E2） of the film identified at room temperature. From the results of temperature dependence of the Raman spectrum, it is deduced that the YMnO3 film has a magnetic phase transition temperature of about 123K. The temperature variation phonon mode at 685cm^-1 shows an anomalous frequency variation near 123 K, suggesting either a more complex mechanism of spin-phonon coupling or strong mixing of phonon modes. The reason for the higher antiferromagnetic Néel temperature TN of the film than that of the bulk counterpart is also discussed.

Axiomatic Design of Micro Quartz Rate Sensor

Quartz rate sensors （QRS） made out of one single piece of quartz crystal are inertial devices which can be used for general rate control, stabilization, automotive and aerospace/defense markets, etc. The mechanical design of the QRS has been investigated based on axiomatic design. The axiomatic design matrix of the mechanical structure of Coriolis Vibratory Gyroscopes （CVG） has been proposed. The mechanical function of QRS is divided into three Function Requirements （FR） , i. e. , FR1 is the drive mode, FR2 is the sense mode, FR3 is a coupled connection where the Coriolis force can couple the two modes with a term proportional to the rotational rate. A new QRS which is easy to be fabricated has been put forward. Furthermore, the new QRS indicated that the axiomatic design is a help to functional design of products.

Development of a Drop Tester for Portable Electronic Products

Portable electronic products are susceptible to accidental drop impact which can cause various functional and physical damage. This paper first presents a patent pending drop tester which allows portable electronic products free drop at any orientation and drop height, and then introduces the drop tester experiment setup and its design principle. Using a cellular phone as an experiment object, we obtain some data such as the impact forces, the impact accelerations, and the strain of an interested spot. By analyzing experiment data the influence of impact to products in various states is investigated with the aim to provide help for the design of products and improvement of reliability.

Correction of thermal airflow distortion in warpage measurements of microelectronic packaging structures via deep learning-based digital image correlation

The projected speckle-based three-dimensional digital image correlation method(3D-DIC)is being increasingly used in the reliability measurement of microelectronic packaging structures because of its noninvasive nature,high precision,and low cost.However,during the measurement of the thermal reliability of packaging structures,the thermal airflow generated by heating introduces distortions in the images captured by the DIC measurement system,impacting the accuracy and reliability of noncontact measurements.To address this challenge,a thermal airflow distortion correction model based on the transformer attention mechanism is proposed specifically for the measurement of thermal warpage in microelectronic packaging structures.This model avoids the oversmoothing issue associated with convolutional neural networks and the lack of physical constraints in generative adversarial networks,ensuring the precision of grayscale gradient changes in speckle patterns and minimizing adverse effects on DIC calculation accuracy.By inputting the distorted images captured by the DIC measurement system into the network,corrected images are obtained for 3D-DIC calculations,thus allowing the thermal warpage measurement results of the sample to be acquired.Through experiments measuring topography with customized step block specimens,the effectiveness of the proposed method in improving warpage measurement accuracy is confirmed;this is particularly true when captured images are affected by thermal airflow at 140°C and 160°C,temperatures commonly encountered in thermal reliability testing of packaging structures.The method successfully reduces the standard deviation from 9.829 to 5.943μm and from 12.318 to 6.418μm,respectively.The results demonstrate the substantial practical value of this method for measuring thermal warpage in microelectronic packaging structures.

SILICON NEEDLE ARRAY ON FLEXIBLE SUBSTRATE FOR FLUID TRANSFER

Transdermal delivery is an attractive alternative, but it is limited by the extremely low permeability of skin. To solve this problem, a novel means--micro needle array based on micro electro-mechanical system （MEMS） technology, is provided to increase permeability of human skin with efficiency, safety and painless delivery. The fabrication method consists of a sequence of deep-reactive ion etching （DRIE）, anisotropic wet etching and conformal thin film deposition. The novel technology can enable the realization of micro fabricated micro needle array on a flexible silicon substrate. The micro needle array can be mounted on non-planar surface or even on flexible objects such as a human fingers and arms. The fabricated hollow wall straight micro needles are 200 μm in length, 30 μm inner diameter, and 50 μm outer diameter with 250 μm center-to-center spacing. Flow rate test proves that the polymeric base construction is important to function of micro needles array in package. Glucose solvent tests show that surface tension is the dominant force to affect the characters of flow in micro needles channel.

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

The advancement of terahertz technology in recent years and its applications in various fields lead to an urgent need for functional terahertz components,among which a terahertz switch is one example of the most importance because it provides an effective interface between terahertz signals and information in another physical quantity.To date many types of terahertz switches have been investigated mainly in the form of metamaterials made from metallic structures and optically-active medium.However,these reported terahertz switches usually suffer from an inferior performance,e.g.,requiring a high pump laser power density due to a low quality factor of the metallic metamaterial resonances.In this paper,we report and numerically investigate a symmetry-broken silicon disk based terahertz resonator array which exhibits one resonance with ultrahigh quality factor for normal incidence of the terahertz radiations.This resonance,which can never be excited for regular circular Si disks,can help to realize a superior terahertz switch with which only an ultra-low optical pump power density is required to modify the free carrier concentration in Si and its refractive index in the terahertz band.Our findings demonstrate that to realize a high terahertz transmittance change from 0 to above 50%,the required optical pump power density is more than 3 orders of magnitude smaller than that required for a split-ring resonator(SRR)based terahertz switch reported in the literature.

Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers

We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.

A Novel Approach for Micro-electro-mechanical System(MEMS) Vacuum Packaging

MEMS vacuum packaging is now the impediment of the MEMS appliance in some specified fields. The major problem of current packaging approach is that the packaging process cannot meet the requirement of the ultra low leak. But the process cannot be improved with the existing technology. We propose a novel approach for MEMS vacuum packaging which can remarkably lower the leak rate. This paper analyzed the vacuum maintaining time of the vacuum packaging and compared the current design and new packaging method.

Degradation of light emitting diodes:a proposed methodology

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.

High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments

Hexagonal boron nitride （h-BN） is believed to offer better passivation to metallic surfaces than graphene owing to its insulating nature, which facilitates blocking the flow of electrons, thereby preventing the occurrence of galvanic reactions. Nevertheless, this may not be the case when an h-BN-protected material is exposed to aqueous environments. In this work, we analyzed the stability of mono and multilayer h-BN stacks exposed to H202 and atmospheric conditions. Our experiments revealed that monolayer h-BN is as inefficient as graphene as a protective coating when exposed to H202. Multilayer h-BN offered a good degree of protection. Monolayer h-BN was found to be ineffective in an air atmosphere as well. Even a 10-15 layers-thick h-BN stack could not completely protect the surface of the metal under consideration. By combining Auger electron spectroscopy and secondary ion mass spectrometry techniques, we observed that oxygen could diffuse through the grain boundaries of the h-BN stack to reach the metallic substrate. Fortunately, because of the diffusive nature of the process, the oxidized area did not increase with time once a saturated state was reached. This makes multflayer （not monolayer） h-BN a suitable long-term oxidation barrier. Oxygen infiltration could not be observed by X-ray photoelectron spectroscopy. This technique cannot assess the chemical composition of the deeper layers of a material. Hence, the previous reports, which relied on XPS to analyze the passivating properties of h-BN and graphene, may have ignored some important subsurface phenomena. The results obtained in this study provide new insights into the passivating properties of mono and multilayer h-BN in aqueous media and the degradation kinetics of h-BN-coated metals exposed to an air environment.

Finite element analysis on stress-induced birefringence of polarization-maintaining optical fiber

Influence of thermal-mechanical properties on the features of the panda polarization-maintaining optical fiber (PMF-) in fabrication process is studied in detail by finite element method (FEM). The stress birefringence is 2.13443×10-4 obtained by the static analysis and 2.1269×10-4 by dynamic analysis. The difference in simulation by two methods is around 0.4%. The non-uniformity of stress birefringence in the fiber core is about 1.6%. Predicted results demonstrate that effect of the thermal conductive parameter on fiber thermal stress dominates. The high and uniform stress birefringence in the fiber core is obtained by appropriately selecting suitable stress region area and position.

A review of passive thermal management of LED module

Recently, the high-brightness LEDs have begun to be designed for illumination application. The increased electrical currents used to drive LEDs lead to thermal issues. Thermal management for LED module is a key design parameter as high operation temperature directly affects their maximum light output, quality, reliability and life time. In this review, only passive thermal solutions used on LED module will be studied. Moreover, new thermal interface materials and passive thermal solutions applied on electronic equipments are discussed which have high potential to enhance the thermal performance of LED Module.

Reliability test and failure analysis of high power LED packages

A new type application specific light emitting diode （LED） package （ASLP） with freeform polycarbonate lens for street lighting is developed, whose manufacturing processes are compatible with a typical LED packaging process. The reliability test methods and failure criterions from different vendors are reviewed and compared. It is found that test methods and failure criterions are quite different. The rapid reliability assessment standards are urgently needed for the LED industry. 85℃/85 RH with 700 mA is used to test our LED modules with three other vendors for 1000 h, showing no visible degradation in optical performance for our modules, with two other vendors showing significant degradation. Some failure analysis methods such as C-SAM, Nano X-ray CT and optical microscope are used for LED packages. Some failure mechanisms such as delaminations and cracks are detected in the LED packages after the accelerated reliability testing. The finite element simulation method is helpful for the failure analysis and design of the reliability of the LED packaging. One example is used to show one currently used module in industry is vulnerable and may not easily pass the harsh thermal cycle testing.

Comparison of the copper and gold wire bonding processes for LED packaging

Wire bonding is one of the main processes of the LED packaging which provides electrical interconnec- tion between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging industry currently. However, due to the high cost of gold wire, copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving. In this paper, the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation. This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging.

Field-effect passivation on silicon nanowire solar cells

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography （NF-PSL）. We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

Research on total-dose hardening for H-gate P D NMOSFET/SIMOX by ion implanting into buried oxide

In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on the wafer implanted with Si^＋ and then annealed in N2, and B transistors are made on the wafer without implantation and annealing. It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift △Vth than B transistors under X-ray total dose irradiation. Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation, showing that the reduced AVth for A transistors is mainly due to its less build-up of oxide charge than B transistors. Photo- luminescence （PL） research indicates that Si implantation results in the formation of silicon nanocrystalline （nanocluster） whose size increases with the implant dose. This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation, and thus reduce the threshold voltage negative shift.