The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

Generation of structured light beams with polarization variation along arbitrary spatial trajectories using tri-layer metasurfaces

Conventionally,the spatially structured light beams produced by metasurfaces primarily highlight the polarization modulation of the beams propagating along the optical axis or the beams'spatial transmission trajectory.In particular,along the optical axis,the polarization state is either constant or varies continuously in each output plane.Here,we develop innovative spatially structured light beams with continually changing polarization along any arbitrary spatial transmission trajectories.With tri-layer metallic metasurfaces,the geometric characteristics of each layer structure can be adjusted to modulate the phase and polarization state of the incident terahertz(THz)wave.The beam will converge to the predefined trajectory along several paths to generate a Bessel-like beam with longitudinal polarization changes.We demonstrate the versatility of the approach by designing two THz-band structured light beams with varying polarization states along the spatial helical transmission trajectory.Continuous linear polarization changes and linear polarization to right circular polarization(RCP)and back to linear polarization changes are realized respectively.The experimental results are basically consistent with the simulated results.Our proposal for arbitrary trajectory structured light beams with longitudinally varying polarization offers a practical method for continuously regulating the characteristics of spatial structured light beams with non-axial transmission.This technique has potential uses in optical encryption,particle manipulation,and biomedical imaging.

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.

Digital Twin Technology of Human-Machine Integration in Cross-Belt Sorting System

The Chinese express delivery industry processes nearly 110 billion items in 2022,averaging an annual growth rate of 200%.Among the various types of sorting systems used for handling express items,cross-belt sorting systems stand out as the most crucial.However,despite their high degree of automation,the workload for operators has intensified owing to the surging volume of express items.In the era of Industry 5.0,it is imperative to adopt new technologies that not only enhance worker welfare but also improve the efficiency of cross-belt systems.Striking a balance between efficiency in handling express items and operator well-being is challenging.Digital twin technology offers a promising solution in this respect.A realization method of a human-machine integrated digital twin is proposed in this study,enabling the interaction of biological human bodies,virtual human bodies,virtual equipment,and logistics equipment in a closed loop,thus setting an operating framework.Key technologies in the proposed framework include a collection of heterogeneous data from multiple sources,construction of the relationship between operator fatigue and operation efficiency based on physiological measurements,virtual model construction,and an online optimization module based on real-time simulation.The feasibility of the proposed method was verified in an express distribution center.

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication(SACM)APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator(SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at-21 V, indicating a breakdown voltage greater than-21 V for the device. The APDs exhibit a unitgain responsivity of 0.5 A/W at-10 V. At-15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of-10 and-25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of-15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor(LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at-21 V and-9 dBm input power reveal signal to noise ratio(SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor(CMOS) process,shows that utilizing the peaking effect at low optical power increases bandwidth.

First demonstration of a self-aligned p-channel GaN back gate injection transistor

In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Theoretical study of particle and energy balance equations in locally bounded plasmas

In this study,new particle and energy balance equations have been developed to predict the electron temperature and density in locally bounded plasmas.Classical particle and energy balance equations assume that all plasma within a reactor is completely confined only by the reactor walls.However,in industrial plasma reactors for semiconductor manufacturing,the plasma is partially confined by internal reactor structures.We predict the effect of the open boundary area(A′_(L,eff))and ion escape velocity(u_(i))on electron temperature and density by developing new particle and energy balance equations.Theoretically,we found a low ion escape velocity(u_(i)/u_(B)≈0.2)and high open boundary area(A′_(L,eff)/A_(T,eff)≈0.6)to result in an approximately 38%increase in electron density and an 8%decrease in electron temperature compared to values in a fully bounded reactor.Additionally,we suggest that the velocity of ions passing through the open boundary should exceedω_(pi)λ_(De)under the condition E^(2)_(0)?(Φ/λ_(De))^(2).

The study of lithographic variation in resistive random access memory

Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.

Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent years.In this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is investigated.On the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and accuracy.On the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing accuracy.Even after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of memory.Further characterizations are done on read disturb to demonstrate its robust reliabilities.By processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN.Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators.

Semi-implantable device based on multiplexed microfilament electrode cluster for continuous monitoring of physiological ions

Modern medicine is increasingly interested in advanced sensors to detect and analyze biochemical indicators.Ion sensors based on potentiometric methods are a promising platform for monitoring physiological ions in biological subjects.Current semi-implantable devices are mainly based on single-parameter detection.Miniaturized semi-implantable electrodes for multiparameter sensing have more restrictions on the electrode size due to biocompatibility considerations,but reducing the electrode surface area could potentially limit electrode sensitivity.This study developed a semi-implantable device system comprising a multiplexed microfilament electrode cluster(MMEC)and a printed circuit board for real-time monitoring of intra-tissue K^(+),Ca^(2+),and Na^(+)concentrations.The electrode surface area was less important for the potentiometric sensing mechanism,suggesting the feasibility of using a tiny fiber-like electrode for potentiometric sensing.The MMEC device exhibited a broad linear response(K^(+):2–32 mmol/L;Ca^(2+):0.5–4 mmol/L;Na^(+):10–160 mmol/L),high sensitivity(about 20–45 mV/decade),temporal stability(>2weeks),and good selectivity(>80%)for the above ions.In vitro detection and in vivo subcutaneous and brain experiment results showed that the MMEC system exhibits good multi-ion monitoring performance in several complex environments.This work provides a platform for the continuous real-time monitoring of ion fluctuations in different situations and has implications for developing smart sensors to monitor human health.

Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.

Electric field dependence of spin qubit in a Si-MOS quantum dot

Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy

Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition

Chemical vapor deposition(CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond(SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence(CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency(CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

Optimization of Metal Coverage on the Emitter in n-Type Interdigitated Back Contact Solar Cells Using a PC2D Simulation

In interdigitated back contact(IBC)solar cells,the metal-electrode coverage on a p-type emitter is optimized by a PC2D simulation.The result shows that the variation of the metal coverage ratio(MCR)will affect both the surface passivation and the electrode-contact properties for the p-type emitter in IBC solar cells.We find that when R_(c) ranges from 0.08 to 0.16Ω·cm^(2),the MCR is optimized with a value of 25%and 33%,resulting in a highest energy-conversion efficiency.The dependences of both Voc and fill factor on MCR are simulated in order to explore the mechanism of the IBC solar cells.

Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.

On the liquid-phase technology of carbon fiber/aluminum matrix composites

The main problems with the liquid-phase technology of carbon fiber/aluminum matrix composites include poor wetting of the fiber with liquid aluminum and formation of aluminum carbide on the fibers’surface.This paper aims to solve these problems.The theoretical and experimental dependence of porosity on the applied pressure were determined.The possibility of obtaining a carbon fiber/aluminum matrix composite wire with a strength value of about 1500 MPa was shown.The correlation among the strength of the carbon fiber reinforced aluminum matrix composite,the fracture surface,and the degradation of the carbon fiber surface was discussed.

Architecture, challenges and applications of dynamic reconfigurable computing

As a computing paradigm that combines temporal and spatial computations,dynamic reconfigurable computing provides superiorities of flexibility,energy efficiency and area efficiency,attracting interest from both academia and industry.However,dynamic reconfigurable computing is not yet mature because of several unsolved problems.This work introduces the concept,architecture,and compilation techniques of dynamic reconfigurable computing.It also discusses the existing major challenges and points out its potential applications.