In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measur...In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles （UAV）, satellite transmission, and communication.展开更多
A wideband low-noise amplifier（LNA） with ESD protection for a multi-mode receiver is presented.The LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency band.After optimized noise m...A wideband low-noise amplifier（LNA） with ESD protection for a multi-mode receiver is presented.The LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency band.After optimized noise modeling and circuit design,the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point（IIP3） is -8 dBm at 6 GHz,and the noise figure is from 2.3 to 3.8 dB in the operating band.The overall power consumption is 8 mW at 2.5 V voltage supply.展开更多
A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. Afte...A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.展开更多
基金the National Natural Science Foundation of China (Grants No. 60676047)Applied Materials-Shanghai Research and Development Fund (Grants No.06SA11)
文摘In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles （UAV）, satellite transmission, and communication.
基金supported by the Applied Material Foundation of the Shanghai,China(Nos.08706200802,08700741300,09700713800)the Shanghai Leading Academic Discipline Project of China(No.B411).
文摘A wideband low-noise amplifier（LNA） with ESD protection for a multi-mode receiver is presented.The LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency band.After optimized noise modeling and circuit design,the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point（IIP3） is -8 dBm at 6 GHz,and the noise figure is from 2.3 to 3.8 dB in the operating band.The overall power consumption is 8 mW at 2.5 V voltage supply.
基金Project supported by the National Key Project of China(No.2009ZX01034-002-002-001)the Applied Material Foundation of Shanghai, China(Nos.08706200802,08700741300,09700713800)the Shanghai Leading Academic Discipline Project,China(No.B411).
文摘A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.
