Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface e...Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy(SEM), micro-Raman spectroscopy(MRS), and transmission electron microscopy(TEM) were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.展开更多
As a computing paradigm that combines temporal and spatial computations,dynamic reconfigurable computing provides superiorities of flexibility,energy efficiency and area efficiency,attracting interest from both academ...As a computing paradigm that combines temporal and spatial computations,dynamic reconfigurable computing provides superiorities of flexibility,energy efficiency and area efficiency,attracting interest from both academia and industry.However,dynamic reconfigurable computing is not yet mature because of several unsolved problems.This work introduces the concept,architecture,and compilation techniques of dynamic reconfigurable computing.It also discusses the existing major challenges and points out its potential applications.展开更多
In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, the...In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.展开更多
The impact of the variations of threshold voltage(Vth) and hold voltage(Vhold) of threshold switching(TS) selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a l...The impact of the variations of threshold voltage(Vth) and hold voltage(Vhold) of threshold switching(TS) selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vthand Vholdare extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32×32 1 S1 R crossbar array under different bias schemes. The results indicate that Vthand Vholdvariations of TS selector can lead to degradation of 1 S1 R array performance parameters,such as minimum read/write voltage, bit error rate(BER), and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vholdand Vthincreases, the BER and the power consumption of 1 S1 R crossbar array under 1/2 bias,1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vholdfrom small to large value. A slight increase of Vthstandard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly.展开更多
Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were careful...Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAIO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfA10 gate dielectrics have interfacial properties superior to those using HfO2 or A1203 dielectric layers.展开更多
In this study the effects of doping atoms (AI, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investiga...In this study the effects of doping atoms (AI, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of A1/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.展开更多
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively....The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.展开更多
Au atoms were vaporized by electron beam evaporation, and their subsequent growths on Si (111 ) and highly ordered pyrolytic graphite (HOPG) substrates were studied using atomic force microscopy. Results show that Au ...Au atoms were vaporized by electron beam evaporation, and their subsequent growths on Si (111 ) and highly ordered pyrolytic graphite (HOPG) substrates were studied using atomic force microscopy. Results show that Au nanoparticles tend to nucleate and grow regularly along the step edges of HOPG, however, nanoparticles are distributed homogeneously over the whole Si substrate. The possibility of controlled growth of Au in ultrahigh vacuum with peculiar surface structures was preseuted.展开更多
This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems t...This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble. The magnetization dynamics equation of the ensemble was developed. By analytically investigating the equation, many magnetization dynamics properties excited by polarized current reported in experiments, such as double spin wave modes and the abrupt frequency jump, can be successfully explained. It is pointed out that an external field is not necessary for spin wave emitting (SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field.展开更多
This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The lea...This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.展开更多
In this paper the master equation method is used to calculate the relaxation and decoherence times of a qubit. The results are beyond Markovian approximation, where the noise spectrum is assumed to be wide-band, so th...In this paper the master equation method is used to calculate the relaxation and decoherence times of a qubit. The results are beyond Markovian approximation, where the noise spectrum is assumed to be wide-band, so that they are valid for not only the wide- but also the narrow-band noises, which may be the main decoherence source in solid-state qubits. Moreover, for some special cases, analytical results can be achieved, which are consistent with those derived by others.展开更多
Energy bandstructures of [100] oriented Si and Ge quantum nanowires with various cross-sections are calculated by using the sp^3d^5s^* tight-binding model with a supercell approach. Results are compared with those ob...Energy bandstructures of [100] oriented Si and Ge quantum nanowires with various cross-sections are calculated by using the sp^3d^5s^* tight-binding model with a supercell approach. Results are compared with those obtained by the first principles method (i.e., density functional theory, or DFT). The differences in the bandstructure between silicon and germanium nanowires are analysed and it is shown that germanium keeps indirect-bandgap and the silicon nanowire along the [100] direction becomes direct-bandgap when the wire diameter shrinks. It is shown in comparison with the available experimental data that the tight-binding method is adequate in predicting the bandstructure parameters relevant to the carrier transport in mesoscopic nanowire devices and is far superior to the DFT method in terms of computational cost.展开更多
Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors...Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.展开更多
We investigate SrBi2 Ta2 O9 (SBT) films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ...We investigate SrBi2 Ta2 O9 (SBT) films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory (FeRAM). All the specimens in this experiment have similar SBT crystal orientations of (115), (020), (220), and (135). The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.571μC/cm^2 and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.展开更多
Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor depo...Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.展开更多
Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials. Instead of using graded buffer method to obtain fully relaxed SiGe film, in this study a new method to obtain relax...Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials. Instead of using graded buffer method to obtain fully relaxed SiGe film, in this study a new method to obtain relaxed SiGe film and strained Si film with much thinner SiGe film was proposed. Almost fully relaxed thin SiGe buffer layer was obtained by Si/SiGe/Si multi-structure oxidation and the SiO2 layer removing before SiGe regrowth. Raman spectroscopy analysis indicates that the regrown SiGe film has a strain relaxation ratio of about 93% while the Si cap layer has a strain of 0.63%. AFM shows good surface roughness. This new method is proved to be a useful approach to fabricate thin relaxed epilayers and strain Si films.展开更多
With the development of VLSI technology, testing design method has been one indispensable fact of the research of VLSI design methodology. Technology of testing design can observably reduce the cost of the chip and he...With the development of VLSI technology, testing design method has been one indispensable fact of the research of VLSI design methodology. Technology of testing design can observably reduce the cost of the chip and help win in time- to-market. Conventional methods of design for test improve the testing performance of the system by modifing the gate-level architecture generally. Re-search in high-level test synthesis has been emphasized on fitting for the trend of high-level VLSI design. In this paper, based on the analysis of different types of testing design methods, a novel compound strategy of design for test in VLSI system is proposed.展开更多
基金supported by the National Basic Research Program of China (Grant 2012CB937500)the National Natural Science Foundation of China (Grants 11422219, 11227202, 11372217, 11272232)+1 种基金the Program for New Century Excellent Talents in University (Grant NCET-13)China Scholarship Council (201308120092)
文摘Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy(SEM), micro-Raman spectroscopy(MRS), and transmission electron microscopy(TEM) were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.
基金supported in part by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2018ZX01028201)in part by the National Natural Science Foundation of China (Grant No. 61672317, No. 61834002)in part by the National Key R&D Program of China (Grant No. 2018YFB2202101)
文摘As a computing paradigm that combines temporal and spatial computations,dynamic reconfigurable computing provides superiorities of flexibility,energy efficiency and area efficiency,attracting interest from both academia and industry.However,dynamic reconfigurable computing is not yet mature because of several unsolved problems.This work introduces the concept,architecture,and compilation techniques of dynamic reconfigurable computing.It also discusses the existing major challenges and points out its potential applications.
基金supported partially by the Important National Science&Technology Specific Projects,China(Grant No.2013ZX02503003)
文摘In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
基金Project supported by the MOST of China(Grant No.2016YFA0201801)the Beijing Advanced Innovation Center for Future Chip(ICFC)+2 种基金Beijing Municipal Science and Technology Project(Grant No.D161100001716002)the National Natural Science Foundation of China(Grant Nos.61674089,61674087,61674092,61076115,and 61774012)the Research Fund from Beijing Innovation Center for Future Chip(Grant No.KYJJ2016008)
文摘The impact of the variations of threshold voltage(Vth) and hold voltage(Vhold) of threshold switching(TS) selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vthand Vholdare extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32×32 1 S1 R crossbar array under different bias schemes. The results indicate that Vthand Vholdvariations of TS selector can lead to degradation of 1 S1 R array performance parameters,such as minimum read/write voltage, bit error rate(BER), and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vholdand Vthincreases, the BER and the power consumption of 1 S1 R crossbar array under 1/2 bias,1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vholdfrom small to large value. A slight increase of Vthstandard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly.
基金Project supported by the National Basic Research Program of China (Grant No. 201 ICBA00602) and the National Science and Technology Major Project, China (Grant No. 2011 ZX02708-002).
文摘Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAIO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfA10 gate dielectrics have interfacial properties superior to those using HfO2 or A1203 dielectric layers.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2011AA010403)
文摘In this study the effects of doping atoms (AI, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of A1/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.
基金supported by the National Natural Science Foundation of China(Grant No.60976013)
文摘The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.
基金the National Fundamental Research Program of China under Grant No.2006CB921106National Natural Science Foundation of China under Grant Nos.10325521,60433050,and 60635040the Science Research Foundation for Doctorial Program of the Ministry of Education under Grant No.20060003048
基金Project supported by the Ministry of Science and Technology of China (2001CB6105) and the National Natural Science Foundation of China (NSFC 599101611982, 29973001)
文摘Au atoms were vaporized by electron beam evaporation, and their subsequent growths on Si (111 ) and highly ordered pyrolytic graphite (HOPG) substrates were studied using atomic force microscopy. Results show that Au nanoparticles tend to nucleate and grow regularly along the step edges of HOPG, however, nanoparticles are distributed homogeneously over the whole Si substrate. The possibility of controlled growth of Au in ultrahigh vacuum with peculiar surface structures was preseuted.
基金supported by Major State Basic Research Development Program of China(Grant No 2006CB921106)the National Natural Science Foundation of China(Grant No 60606021)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No 20060003067)
文摘This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble. The magnetization dynamics equation of the ensemble was developed. By analytically investigating the equation, many magnetization dynamics properties excited by polarized current reported in experiments, such as double spin wave modes and the abrupt frequency jump, can be successfully explained. It is pointed out that an external field is not necessary for spin wave emitting (SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field.
基金Project supported by the National Natural Science Foundation of China (Grant No 6037202/F010204).
文摘This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.
基金Project supported by the SRFDPthe PCSIRT+2 种基金the NFRPC (Grant No 2006CB921205)the National Natural Science Foundation of China (Grant Nos 10534060 and 10625416)the State Key Program for Basic Research of China (Grant Nos 2006CB921801and 2006CB921106)
文摘In this paper the master equation method is used to calculate the relaxation and decoherence times of a qubit. The results are beyond Markovian approximation, where the noise spectrum is assumed to be wide-band, so that they are valid for not only the wide- but also the narrow-band noises, which may be the main decoherence source in solid-state qubits. Moreover, for some special cases, analytical results can be achieved, which are consistent with those derived by others.
文摘Energy bandstructures of [100] oriented Si and Ge quantum nanowires with various cross-sections are calculated by using the sp^3d^5s^* tight-binding model with a supercell approach. Results are compared with those obtained by the first principles method (i.e., density functional theory, or DFT). The differences in the bandstructure between silicon and germanium nanowires are analysed and it is shown that germanium keeps indirect-bandgap and the silicon nanowire along the [100] direction becomes direct-bandgap when the wire diameter shrinks. It is shown in comparison with the available experimental data that the tight-binding method is adequate in predicting the bandstructure parameters relevant to the carrier transport in mesoscopic nanowire devices and is far superior to the DFT method in terms of computational cost.
基金Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Program of China under Grant No 2004AA404240.
文摘Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.
基金Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Programme of China under Grant No 2004AA404240.
文摘We investigate SrBi2 Ta2 O9 (SBT) films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory (FeRAM). All the specimens in this experiment have similar SBT crystal orientations of (115), (020), (220), and (135). The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.571μC/cm^2 and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.
文摘Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.
基金This project was financially supported by the National Natural Science Foundation of China(No.60476017).
文摘Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials. Instead of using graded buffer method to obtain fully relaxed SiGe film, in this study a new method to obtain relaxed SiGe film and strained Si film with much thinner SiGe film was proposed. Almost fully relaxed thin SiGe buffer layer was obtained by Si/SiGe/Si multi-structure oxidation and the SiO2 layer removing before SiGe regrowth. Raman spectroscopy analysis indicates that the regrown SiGe film has a strain relaxation ratio of about 93% while the Si cap layer has a strain of 0.63%. AFM shows good surface roughness. This new method is proved to be a useful approach to fabricate thin relaxed epilayers and strain Si films.
文摘With the development of VLSI technology, testing design method has been one indispensable fact of the research of VLSI design methodology. Technology of testing design can observably reduce the cost of the chip and help win in time- to-market. Conventional methods of design for test improve the testing performance of the system by modifing the gate-level architecture generally. Re-search in high-level test synthesis has been emphasized on fitting for the trend of high-level VLSI design. In this paper, based on the analysis of different types of testing design methods, a novel compound strategy of design for test in VLSI system is proposed.