Experimental investigation on resonant tunneling in various GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>Asdouble barrier single well structures has been performed by using tunneling spectroscopy atdiffe...Experimental investigation on resonant tunneling in various GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>Asdouble barrier single well structures has been performed by using tunneling spectroscopy atdifferent temperatures.The results show that in addition to resonant tunneling via GaAs wellstate confined by Al<sub>x</sub>Ga<sub>1-x</sub>As Γ-point barrier there exists resonant tunneling via GaAs well stateconfined by Al<sub>x</sub>Ga<sub>1-x</sub>As X-point barrier for both indirect（x】0.4）and direct（x【0.4）cases.展开更多
The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar...The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.展开更多
文摘Experimental investigation on resonant tunneling in various GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>Asdouble barrier single well structures has been performed by using tunneling spectroscopy atdifferent temperatures.The results show that in addition to resonant tunneling via GaAs wellstate confined by Al<sub>x</sub>Ga<sub>1-x</sub>As Γ-point barrier there exists resonant tunneling via GaAs well stateconfined by Al<sub>x</sub>Ga<sub>1-x</sub>As X-point barrier for both indirect（x】0.4）and direct（x【0.4）cases.
文摘The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.
