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Microwave synthesis and enhancement of thermoelectric performance in Hf_(x)Ti_(1-x)NiSn_(0.97)Sb_(0.03)half-Heusler bulks 被引量:1
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作者 Ying Lei Yu Li +2 位作者 Run-Dong Wan Wen Chen Hong-Wei Zhou 《Rare Metals》 SCIE EI CAS CSCD 2023年第11期3780-3786,共7页
We obtained TiNiSn-based half-Heusler Hf_(x)Ti_(1-x)NiSn_(0.97)Sb_(0.03)bulks with 85%-96%relative densities via 5-min microwave synthesis and 20-min microwave sintering in sealed vacuum.The phase composition and micr... We obtained TiNiSn-based half-Heusler Hf_(x)Ti_(1-x)NiSn_(0.97)Sb_(0.03)bulks with 85%-96%relative densities via 5-min microwave synthesis and 20-min microwave sintering in sealed vacuum.The phase composition and microstructure of samples were characterized by X-ray diffractometer(XRD)and scanning electron microscopy(SEM).Thermoelectric(TE)properties were measured,i.e.,Seebeck coefficient(S),electrical resistivity(ρ),and thermal conductivity(κ)through Seebeck coefficient/resistance analysis system(S/RAs)and laser flash thermal analyzer(LFT).The results show that the nearly single phase exists after microwave sintering.The grain sizes and the number of grain boundaries decrease with increase in Hf-doping amount due to an increase in point defects.The matrix grains for Hf_(0.1)Ti_(0.9)NiSn_(0.97)Sb_(0.03)are~10μm.The nanoscle pores and precipitates are present as second phases in matrix grain.The real composition for Hf_(0.1)Ti_(0.9)NiSn_(0.97)Sb_(0.03)matrix grain is Hf_(3.51)Ti_(28.76)-Ni_(34.76)Sn_(31.55)Sb_(1.43).The variation trends of electrical resistivity,Seebeck coefficient,power factor,and thermal conductivity were analyzed in detail.The maximum figure of merit(ZT)of 0.46 is obtained for Hf_(0.1)Ti_(0.9-)NiSnSn_(0.97)Sb_(0.03)at 723 K.The innovation route exhibits advantages for predation of TE bulks when compared to the conventional methods,especially in terms of efficiency while it still maintains TE performance. 展开更多
关键词 Half-Heusler alloys Microwave synthesis Hf doping Thermoelectric figure of merit
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