We report thermodynamic and neutron diffraction measurements on the magnetic ordering properties of the honeycomb lattice magnet YbCl_(3). We find YbCl_(3) exhibits a Ne′el type long-range magnetic order at the wavev...We report thermodynamic and neutron diffraction measurements on the magnetic ordering properties of the honeycomb lattice magnet YbCl_(3). We find YbCl_(3) exhibits a Ne′el type long-range magnetic order at the wavevector(0, 0, 0) below TN= 600 mK.This magnetic order is associated with a small sharp peak in heat capacity and most magnetic entropy release occurs above the magnetic ordering temperature. The magnetic moment lies in-plane, parallel to the monoclinic a-axis, whose magnitude mYb= 0.86(3) μBis considerably smaller than the expected fully ordered moment of 2.24 μBfor the doublet crystal-field ground state. The magnetic ordering moment gradually increases with increasing magnetic field perpendicular to the ab-plane, reaching a maximum value of 1.6(2) μBat 4 T, before it is completely suppressed above ~ 9 T. These results indicate the presence of strong quantum fluctuations in YbCl_(3).展开更多
The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal c...The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.展开更多
In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved c...In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral response.However,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films.In this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at will.The optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer coupling.The stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.展开更多
基金supported by the National Key R&D Program of the Ministry of Science and Technology of China (Grant No. 2016YFA0300203)the Innovation Program of Shanghai Municipal Education Commission (Grant No. 2017-01-07-00-07-E00018)+1 种基金the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01)the National Natural Science Foundation of China (Grant No. 11874119)。
文摘We report thermodynamic and neutron diffraction measurements on the magnetic ordering properties of the honeycomb lattice magnet YbCl_(3). We find YbCl_(3) exhibits a Ne′el type long-range magnetic order at the wavevector(0, 0, 0) below TN= 600 mK.This magnetic order is associated with a small sharp peak in heat capacity and most magnetic entropy release occurs above the magnetic ordering temperature. The magnetic moment lies in-plane, parallel to the monoclinic a-axis, whose magnitude mYb= 0.86(3) μBis considerably smaller than the expected fully ordered moment of 2.24 μBfor the doublet crystal-field ground state. The magnetic ordering moment gradually increases with increasing magnetic field perpendicular to the ab-plane, reaching a maximum value of 1.6(2) μBat 4 T, before it is completely suppressed above ~ 9 T. These results indicate the presence of strong quantum fluctuations in YbCl_(3).
基金supported by the funding from National Natural Science Foundation of China(Grants No.61851406,61874128,and U1732268)Frontier Science Key Program of CAS(Grant No.QYZDY-SSWJSC032)+2 种基金Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11)Shenzhen Science and Technology Innovation Program(Grant No.JCYJ20190806142614541).
文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1200500 and 2018YFA0703700)in part by the National Natural Science Foundation of China(No.61774042)+1 种基金the Innovation Program of Shanghai Municipal Education Commission(No.2021-01-07-00-07-E00077)Shanghai Municipal Science and Technology Commission(Nos.21DZ1100900 and 20ZR1403200).
文摘In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral response.However,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films.In this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at will.The optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer coupling.The stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.